Abstract
The in-plane residual stresses of single crystal silicon wafers that were coated with filament-evaporated aluminum films have been obtained from measurements of strains produced by shadow Moir interferometry. The aluminum films were deposited as thin film layers over a 8.9cm diameter area on (100) p-type, 10.16cm diameter, 0.05cm thick single crystal silicon wafers, and the stresses were determined by an analysis that accounts for the finite dimensions of the samples. The aluminum film thicknesses varied from 70 to 78Onm. The aluminum films increased the inplane stresses of the wafers by 3 to 15MPa depending on the film thickness.
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References
“Microelectronics Packaging Handbook,” eds. R.R. Tummala and E.J. Rymaszewski, Van Nostrand Reinhold Publ.: New York, 1989.
“Silicon Device Processing,” NBS Special Publication 337: U.S. Department of Commerce, 1907.
A.T. Andonian and S. Danyluk, Mech. Res. Comm., 11(2)(1984)97.
J.H. van der Merwe, J. Appl. Phys., 31(4)(1963)123.
J.H. Mathews and E. Grunbaum, Phil, Mag., 11(1965)1233.
P. Chaudhari, J. Vac. Sci. Tech., 2(1972)520.
A. Kubovy and M. Janda, Thin Solid Films, 42 (1977)169.
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Park, HW., Danyluk, S. In-Plane Residual Stresses in Filament-Evaporated Aluminum Films on Single Crystal Silicon Wafers. MRS Online Proceedings Library 167, 365–372 (1989). https://doi.org/10.1557/PROC-167-365
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DOI: https://doi.org/10.1557/PROC-167-365