Abstract
The range of microstructural effects on thin film and interconnect properties is briefly described, and the improvement of interconnect reliability with increased strength is reviewed. We show that the strengthening effect of dispersed second phases depends on their resistance to coarsening during thermal treatments. The rapid coarsening of Θ phases during annealing and accelerated electromigration testing is reviewed, leading to a discussion of metallurgical factors which determine the coarsening behavior. We describe alloy systems expected to have reduced coarsening rates. We suggest that the recently reported increased reliability of Al-Sc interconnects is due to finely dispersed coherent phases which are particularly resistant to coarsening. The range of electromigration failure morphologies is illustrated with particular emphasis on transgranular slit failures. The failures are discussed in terms of diffusion pathways and models for failure.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
F. M. D'Heurle, Met. Trans., 2, 683 (1971).
F. Fischer, F. Neppl, in Proc. IEEE International Reliability Physics Symposium, (IEEE publishers, Las Vegas, 1984), vol. 1984. 190–192.
Y. Koubuchi, J. Onuki, M. Suwa, S. Fukada, in Proc. VLSI Multilevel Interconnection Con, (IEEE publishers, Santa Clara, Ca., 1989), vol. TH-0259-2/89/0000-0419, pp. 419–425.
S.-I. Ogawa, H. Nishimura, in Proc. IEEE International Conference on Electron Devices and Materials (IEEE publishers, 1991), vol. IEEE-IEDM 1991, pp. 10.4.1-10.4.4.
J.E. Sanchez, Jr., L.T. McKnelly, J.W. Morris, Jr., in Phase Transformation Kinetics in Thin Films, edited by M. Chen (Mater. Res. Soc. Proc. 230, Pittsburgh, PA, 1991) pp. 67–72
J.E. Sanchez, Jr., O. Kraft, E. Arzt, in Proc. First International Workshop on Stress Induced Phenomena in Metallizations (American Institute of Physics, Ithaca, NY, 1991)
J.E. Sanchez, Jr., L.T. McKnelly, J.W. Morris, Jr., J. Electron Mater., 19, 1213 (1990).
J.E. Sanchez, Jr., J.W. Morris, Jr., in Materials Reliability Issues in Microelectronics, edited by J.R. Lloyd et al (Mater. Res. Soc. Proc. 225, Pittsburgh, PA, 1991) pp. 53–58
S. Vaidya, A.K. Sinha, Thin Solid Films, 75, 253 (1981).
J. Cho, C.V. Thompson, Appl. Phys. Lett., 54, 2577 (1989).
D.T. Walton, H.J. Frost, C.V. Thompson, in Materials Reliability Issues in Microelectronics, edited by J.R. Lloyd et al (Mater. Res. Soc. Proc. 225, Pittsburgh, PA, 1991) pp. 219–224
R. Venkatraman, J.C. Bravman, to appear in J. Mater. Res. (1992).
P.R. Besser, R. Venkatraman, S. Brennan, J.C. Bravman, in Thin Film Stresses and Mechanical Properties III, edited by W.D. Nix et al (Mat. Res. Soc. Proc. 239, Pitts., PA, 1991)
M.J. Attardo, R. Rosenberg, J. Appl. Phys., 41, 2381 (1970).
D.B. Knorr, D. Tracy, K. P. Rodbell, Appl. Phys. Lett., 59, 3241 (1991).
W.D. Nix, Metallurgical Transactions A, 20A, 2217 (1989).
J.E. Sanchez, Jr., E. Arzt, to appear in Scripta Metallurgica et Materialia, (1992).
I.A. Blech, C. Herring, Appl. Phys. Lett., 29, 131 (1976).
C.A. Ross, J.S. Drewery, R.E. Somekh, J.E. Evetts, J. Appl. Phys., 66, 2349 (1989).
E. Arzt, W.D. Nix, J. Mater. Res., 6, 731 (1991).
B. Greenebaum, A.I. Sauter, P.A. Flinn, W.D. Nix, Appl. Phys. Lett., 58, 1845 (1991).
A.J. Griffin, F.R. Brotzen, C. Dunn, Scripta Metallurgica, 20, 1271 (1986).
M. Doerner, D.S. Gardner, W.D. Nix, J. Mater. Res., 1, 845 (1986).
D.J. Srolovitz, M.P. Anderson, G.S. Grest, P.S. Sahni, Acta Metallurgica, 32, 1429 (1984).
W.W. Mullins, Acta Metallurgica, 6, 414 (1958).
J.E. Sanchez, Jr., E. Arzt, Scripta Metallurgica et Materialia, 26, 1325–1330 (1992).
D.R. Frear, J.E. Sanchez, Jr., A.D. Romig, J.W. Morris, Met. Trans A, 21A, 2449 (1990).
E. Arzt, O. Kraft, J.E. Sanchez, Jr., S. Bader, W.D. Nix, in Thin Films: Stresses and Mechanical Properties III, edited by W.D. Nix (Mat. Res. Soc. Proc. 239, Boston, MA, 1991)
O. Kraft, J.E. Sanchez, Jr., E. Arzt, in Materials Reliability Issues in Microelectronics II, edited by J.R. Lloyd et al (Mater. Res. Soc. Proc. 265, Pittsburgh, PA, 1992)
J.E. Sanchez, Jr., L.T. McKnelly, J.W. Morris, Jr., submitted Appl. Phys. Lett., (1991).
P.H. La Marche, R. Levi-Setti, K. Lam, IEEE Trans. Nucl. Sci., NS-30, 1240 (1983).
A.J. Learn, J. Electron. Mater., 3, 531 (1974).
M V. Speight, Acta Metallurgica, 16, 133 (1968).
J.J. Hoyt, S. Spooner, Acta Metallurgica et Materialia, 39, 689 (1991).
H.B. Aaron, H.I. Aaronson, Acta Metallurgica, 18, 699 (1970).
R.R. Sawtell, Ph.D Thesis, University of California, Berkeley, Dept. of Mat. Sci., (1988).
M. Hasunuma, et al., in Proc. IEEE International Conference on Electron Devices and Materials (IEEE publishers, Washington, DC1989), vol. IEEE-IEDM 1989, pp. 677–680.
Acknowledgements
We acknowledge the assistance of L.T.McKnelly and S. Bader with sample preparation, O.Kraft and R. Young (FEI Company, Cambridge, UK) with SEM and FIB microscopy. One author (JES) would like to acknowledge the support of the Max-Planck Society during his tenure in Stuttgart, Germany.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sanchez, J., Arzt, E. Microstructural Aspects of Interconnect Failure. MRS Online Proceedings Library 265, 131–142 (1992). https://doi.org/10.1557/PROC-265-131
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-265-131