Abstract
A refined thermodynamic analysis of the reaction between molten Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to Al4C3 formation than previously reported. Preliminary rnicrostructural studies confirm the formation of interfacial Al4C3 for pure Al thin films on SiC reacted at 900°C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.
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Acknowledgments
The authors thank Alexei Vassiliev for preparing the TEM samples referenced in this work. Funding for this project was provided through the NSF Research Experience for Undergraduates Program at Purdue University and by IBM Grant No. 6712178.
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Hayes, T., Ray, F., Trumble, K. et al. Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide. MRS Online Proceedings Library 403, 489–494 (1995). https://doi.org/10.1557/PROC-403-489
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DOI: https://doi.org/10.1557/PROC-403-489