Abstract
Trimethylaluminum and ammonia were used as precursors in the high temperature (900°C) deposition of AIN on silicon at vacuum pressure. The emitted radiation was collected in situ by a FTIR spectrometer. Film thickness was monitored in situ by interference oscillations in a red diode laser beam reflected off the sample. The thickness measurements were correlated with IR emission spectra from the emerging AIN film, and a principal component analysis (PCA) and principal component regression (PCR) were performed on the data.
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Acknowledgments
This work is supported by BMDO URISP grant N00014-96-1-0782 entitled “Growth, Doping and Contacts for Wide Band Gap Semiconductors.” The authors would like to thank Patrick Idwasi for his assistance with the FTIR emission spectrometer.
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Allen, S., Richardson, H. In Situ Monitoring of MOCVD of Aluminum Nitride by Optical Spectroscopies. MRS Online Proceedings Library 591, 282–287 (1999). https://doi.org/10.1557/PROC-591-301
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DOI: https://doi.org/10.1557/PROC-591-301