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Effect of Light Intensity on Schottky Barrier Widths and I-V Characteristics of Polymer Heterojunction Photodiodes

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Abstract

The Schottky barriers that forms on the interface between aluminum and organic semiconductor of polymer heterojunction photodiodes based on poly(3-hexylthiophene): [6,6]-phenyl-C61-butyric acid methylester blend, has been investigated according to Mott-Schottky curves. We focused on the effect of light intensity on the Schottky barrier widths and I-V characteristics of the devices. Comparison of the mathematical models and experimental data measured under different light intensities indicate a dependency of Schottky barrier to the light intensity.

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Authors and Affiliations

  1. Department of Electrical Engineering, University of California Riverside, Riverside, CA, 92521, USA

    Ali Bilge Guvenc & Mihrimah Ozkan

  2. Department of Mechanical Engineering, University of California Riverside, Riverside, CA, 92521, USA

    Cengiz Ozkan

  3. Material Science and Engineering Program, University of California Riverside, Riverside, CA, 92521, USA

    Cengiz Ozkan

Authors
  1. Ali Bilge Guvenc
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  2. Cengiz Ozkan
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  3. Mihrimah Ozkan
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Guvenc, A.B., Ozkan, C. & Ozkan, M. Effect of Light Intensity on Schottky Barrier Widths and I-V Characteristics of Polymer Heterojunction Photodiodes. MRS Online Proceedings Library 1359, 508 (2011). https://doi.org/10.1557/opl.2011.1015

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  • DOI: https://doi.org/10.1557/opl.2011.1015

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