Abstract
Blank chips for a molecular single-electron transistor were created with the use of etching technology with a focused ion beam. Etching can be characterized as a process with a high speed of production, great reproducibility, mild requirements for prior lithographic operations, and rather good possibilities for decreasing gap width. The optimal parameters of scission of the metallic jumper of the electrodes were found, so that it is possible to create a 70 nm gap suitable for the production of a system with “overhanging” electrodes.
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Original Russian Text © I.V. Sapkov, V.V. Kolesov, E.S. Soldatov, 2009, published in Vestnik Moskovskogo Universiteta. Fizika, 2009, No. 4, pp. 26–29.
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Sapkov, I.V., Kolesov, V.V. & Soldatov, E.S. Using a focused ion beam for the creation of a molecular single-electron transistor. Moscow Univ. Phys. 64, 384–388 (2009). https://doi.org/10.3103/S0027134909040079
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DOI: https://doi.org/10.3103/S0027134909040079