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Growth of Crystals

  • Book
  • © 2002

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Editors:
  1. E. I. Givargizov

    1. Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia

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    You can also search for this editor in PubMed   Google Scholar

  2. A. M. Mel’nikova

    1. Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

  • Final volume in this extensive series of Russian work on crystal growth
  • Focus particularly on crystalline film growth

Part of the book series: Growth of Crystals (GROC, volume 21)

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Table of contents (16 chapters)

  1. Front Matter

    Pages i-ix
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  2. Growth and Doping of Semiconductor Compounds: Kinetics of Incorporation Processes at Kink Sites

    • Yu. Yu. Hervieu, M. P. Ruzaikin
    Pages 1-9

  3. Gas-Phase Growth Kinetics and Morphology of Lead and Germanium Telluride Crystals

    • L. V. Yashina, V. I. Dernovskii, V. P. Zlomanov, V. I. Shtanov
    Pages 11-23

  4. Lateral Epitaxy of Gallium Arsenide by Chloride Vapor Transport

    • I. V. Ivonin, L. G. Lavrent’eva, L. P. Porokhovnichenko
    Pages 25-35

  5. Growth and Structure of Si Epilayers on Porous Si

    • A. A. Fedorov, M. A. Revenko, E. M. Trukhanov, S. I. Romanov, A. A. Karanovich, V. V. Kirienko et al.
    Pages 37-43

  6. Heteroepitaxy of Heterovalent Compounds: Molecular Beam Deposition of ZnSe on GaAs

    • M. V. Yakushev, Yu. G. Sidorov, L. V. Sokolov, V. G. Kesler, L. M. Logvinskii, T. A. Gavrilova
    Pages 45-56

  7. Effect of Crystallographic Orientation of the Interface on the Growth of Perfect Epitaxial Layers of Semiconductors

    • E. M. Trukhanov, A. V. Kolesnikov, G. A. Lyubas
    Pages 57-66

  8. InGaAsP Solid Solutions: Phase Diagrams, Growth from the Melt on GaAs Substrates, Elastically Strained Epitaxial Layers

    • Yu. B. Bolkhovityanov, A. S. Yaroshevich, M. A. Revenko, E. M. Trukhanov
    Pages 67-79

  9. Theory of Island Film Growth from a Eutectic Melt at the Late Stage of Evolution

    • S. A. Kukushkin, D. A. Grigor’ev
    Pages 81-89

  10. Self-Sustained Nuclei-Assisted Explosive Crystallization

    • V. P. Koverda, V. N. Skokov
    Pages 91-101

  11. Morphological Instability and Inclusion Formation During Crystal Growth from a Flowing Solution

    • S. Yu. Potapenko
    Pages 103-116

  12. Mechanisms of Striation Formation in Layer Growth of Crystals from Solutions

    • I. L. Smolsky, A. E. Voloshin, E. B. Rudneva, N. P. Zaitseva, J. De Yoreo
    Pages 117-130

  13. Block Formation and Crystallographic Orientation Changes During Growth of Shaped Sapphire Single Crystals

    • P. I. Antonov, S. I. Bakholdin, V. M. Krymov, I. L. Shul’pina, M. P. Shcheglov
    Pages 131-139

  14. Revised Phase Diagrams of LiF-RF3 (R = La-Lu, Y) Systems

    • P. P. Fedorov, B. P. Sobolev, L. V. Medvedeva, B. M. Reiterov
    Pages 141-154

  15. The Growth of Laser Oxide Crystals: Structural Aspects

    • E. V. Zharikov, G. M. Kuz’micheva, S. G. Novikov
    Pages 155-180

  16. Vibrational Control of Czochralski Crystal Growth

    • A. Z. Myal’dun, A. I. Prostomolotov, N. K. Tolochko, N. A. Verezub, E. V. Zharikov
    Pages 181-196

  17. Ingrown Regular Domain Structure and Impurity Distribution in LiNbo3Doped with a Rare Earth (Nd,Eu) and Magnesium

    • I. I. Naumova, N. F. Evlanova, O. A. Gliko, A. A. Lukashev, S. V. Lavrishchev
    Pages 197-205
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Keywords

About this book

Growth of Crystals, Volume 21 presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the late 1990's to date.

The volume contains 16 reviewed chapters on various aspects of crystal and crystalline film growth from various phases (vapour, solution, liquid and solid). Both fundamental aspects, e.g. growth kinetics and mechanisms, and applied aspects, e.g. preparation of technically important materials in single-crystalline forms, are covered.

A large portion of the volume is devoted to film growth, including film growth from eutectic melt, from amorphous solid state, kinetics of lateral epitaxy and film growth on specially structured substrates. An important chapter in this section covers heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which have important applications in the field of photonics.

The volume also includes a detailed analysis of the structural aspects of a broad range of laser crystals, information that is invaluable for successfully growing perfect, laser-effective, single crystals.

Editors and Affiliations

  • Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia

    E. I. Givargizov, A. M. Mel’nikova

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