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Site Characterization and Aggregation of Implanted Atoms in Materials

  • Book
  • © 1980

Overview

Editors:
  1. A. Perez

    1. Université Claude Bernard Lyon I, Villeurbanne, France

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  2. R. Coussement

    1. University of Leuven, Leuven, Belgium

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Part of the book series: NATO Science Series B: (NSSB, volume 47)

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Table of contents (28 chapters)

  1. Implantation Effects At Higher Concentrations, Aggregation Phenomena

    1. Equilibrium Phase Formation by Ion Implantation

      • S. T. Picraux
      Pages 307-323

    2. Formation of Nonequilibrium Systems by Ion Implantation

      • S. T. Picraux
      Pages 325-337

    3. Perturbations of the Sputtering Yield

      • P. D. Townsend
      Pages 339-354

  3. New Fields of Applications

    1. Front Matter

      Pages 441-441
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    2. Surface Property Modification in Ion-Implanted Metals

      • G. Dearnaley
      Pages 443-456

    3. Implantation in Optical Materials

      • P. D. Townsend
      Pages 457-468

    4. A General Survey of the Panel Discussions

      • G. Marest
      Pages 469-494

    5. Concluding Remarks

      • D. Quitmann
      Pages 495-498

  4. Back Matter

    Pages 499-520
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Keywords

About this book

Explosive developments in microelectronics, interest in nuclear metallurgy, and widespread applications in surface science have all produced many advances in the field of ion implantation. The research activity has become so intensive and so broad that the field has become divided into many specialized subfields. An Advanced Study Institute, covering the basic and common phenomena of aggregation, seems opportune for initiating interested scientists and engineers into these various active subfields since aggregation usually follows ion implantation. As a consequence, Drs. Perez, Coussement, Marest, Cachard and I submitted such a pro­ posal to the Scientific Affairs Division of NATO, the approval of which resulted in the present volume. For the physicist studying nuclear hyperfine interactions, the consequences of aggregation of implanted atoms, even at low doses, need to be taken into account if the results are to be correctly interpreted. For materials scientists and device engineers, under­ standing aggregation mechanisms and methods of control is clearly essential in the tailoring of the end products.

Editors and Affiliations

  • Université Claude Bernard Lyon I, Villeurbanne, France

    A. Perez

  • University of Leuven, Leuven, Belgium

    R. Coussement

Bibliographic Information

  • Book Title: Site Characterization and Aggregation of Implanted Atoms in Materials

  • Editors: A. Perez, R. Coussement

  • Series Title: NATO Science Series B:

  • DOI: https://doi.org/10.1007/978-1-4684-1015-0

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Plenum Press, New York 1980

  • Hardcover ISBN: 978-0-306-40299-9Due: 01 January 1980

  • Softcover ISBN: 978-1-4684-1017-4Published: 14 March 2012

  • eBook ISBN: 978-1-4684-1015-0Published: 06 December 2012

  • Series ISSN: 0258-1221

  • Edition Number: 1

  • Number of Pages: 520

  • Topics: Physics, general

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