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Heterostructures on Silicon: One Step Further with Silicon

  • Book
  • © 1989

Overview

Editors:
  1. Yves I. Nissim

    1. Physics of Materials and Microstructures Division, Bagneux Laboratory, C.N.E.T., Bagneux, France

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    You can also search for this editor in PubMed   Google Scholar

  2. Emmanuel Rosencher

    1. Physics Division, Central Research Laboratory, Thomson CSF, Orsay, France

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: NATO Science Series E: (NSSE, volume 160)

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Table of contents (38 chapters)

  1. Front Matter

    Pages i-xiii
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  2. GaAs ON Si

    1. MBE Growth of GaAs and III–V Quantum Wells on Si

      • K. Woodbridge
      Pages 1-6

    2. Epitaxy of GaAs on Patterned Si Substrates by MBE

      • M. N. Charasse, B. Bartenlian, J. P. Hirtz, A. Peugnet, J. Chazelas, H. Blank
      Pages 7-12

    3. Embedded Molecular Beam Epitaxy for a Coplanar Gallium-Arsenide on Silicon Technology

      • J. De Boeck, J. B. Liang, J. Vanhellemont, G. Borghs
      Pages 13-18

    4. Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlattices

      • Zuzanna Liliental-Weber, E. R. Weber, J. Washburn, T. Y. Liu, H. Kroemer
      Pages 19-26

    5. Growth of GaAs and GaAlAs Double Heterostructures on Silicon by MOCVD

      • R. Azoulay, E. V. K. Rao, B. Sermage, G. Leroux, L. Dugrand, N. Draidia
      Pages 27-36

    6. Developement of Molecular Beam Epitaxy for Low Temperature and Lattice-Mismatched Systems Growth of III–V Compounds

      • Luisa Gonzàlez, Ana Ruiz, Yolanda Gonzàlez, Angel Mazuelas, Fernando Briones
      Pages 37-44

    7. Mombe and Pemocvd Growth of GaAs on Si (100) Substrates

      • M. Kamp, J. Leiber, J. Musolf, A. Brauers, M. Weyers, H. Heinecke et al.
      Pages 45-50

    8. Correlation Between Structural and Optical Properties OF GaAs-on-Si Grown by Molecular Beam Epitaxy

      • K. Ploog, F. E. G. Guimaraes, W. Stolz
      Pages 51-59

    9. GaAs on Si: Potential Applications

      • Don W. Shaw
      Pages 61-74

  3. Other III–V and II–VI on Si

    1. Ge, GaAs and InSb Heteroepitaxy on (100) Si

      • D. C. Houghton, J.-M. Baribeau, T. E. Jackman, J. McCaffrey, T. Sudersena Rao, J. B. Webb et al.
      Pages 75-83

    2. Heteroepitaxy of CdTe on GaAs-ON-Si

      • G. Radhakrishnan, A. Nouhi, J. Katz
      Pages 85-91

    3. Heteroepitaxial Growth of (Al)GaAs on InP by MOVPE

      • A. Ackaert, P. Demeester, I. Moerman, R. Baets
      Pages 93-99

  4. SiGe Heterostructures

    1. SiGe/Si Superlattices: Strain Influence and Devices

      • E. Kasper
      Pages 101-119

    2. Relaxation of Si/Si1-xGex Strained Layer Structures

      • C. J. Gibbings, C. G. Tuppen, M. A. G. Halliwell, M. Hockly, S. T. Davey, M. H. Lyons
      Pages 121-128

    3. Unstrained vs. Strained Layer Epitaxy: Thick Ge Layers and Ge/Si Superlattices on Si(100)

      • M. Ospelt, K. A. Mäder, W. Bacsa, J. Henz, H. Von Känel
      Pages 129-136

    4. Direct Band-Gap Si-Based Semiconductors, Principles and Prospects

      • T. P. Pearsall
      Pages 137-144

    5. Growth and Characterization of Si-Ge Multilayer Structures on Si(100)

      • J.-M. Baribeau, D. J. Lockwood, M. W. C. Dharma-Wardana, G. C. Aers, D. C. Houghton
      Pages 145-152

    6. Realization of Short Period SI/GE Strained-Layer Superlattices

      • K. Eberl, W. Wegscheider, E. Friess, G. Abstreiter
      Pages 153-160

    7. Dopant Segregation and Incorporation in Molecular Beam Epitaxy

      • S. Andrieu, F. Arnaud d’Avitaya, J. C. Pfister
      Pages 161-168
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Keywords

About this book

In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.

Editors and Affiliations

  • Physics of Materials and Microstructures Division, Bagneux Laboratory, C.N.E.T., Bagneux, France

    Yves I. Nissim

  • Physics Division, Central Research Laboratory, Thomson CSF, Orsay, France

    Emmanuel Rosencher

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