Abstract
The dissipative quantum dynamics of the central island of a nanoelectromechanical single-electron transistor is studied at high bias voltage and zero temperature. The equation of motion for the reduced density operator describing the vibrational degree of freedom is derived. It is shown that when the dissipation is below a certain threshold value, the vibrational ground state of the central island is unstable. If the electric field E between the leads is much greater then a characteristic value, it is shown that the instability develops into a steady-state solution that corresponds to the quasiclassical shuttle picture.
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Fedorets, D., Gorelik, L.Y., Shekhter, R.I., Jonson, M. (2004). Quantum Precursor of Shuttle Instability. In: Lerner, I.V., Altshuler, B.L., Gefen, Y. (eds) Fundamental Problems of Mesoscopic Physics. NATO Science Series II: Mathematics, Physics and Chemistry, vol 154. Springer, Dordrecht. https://doi.org/10.1007/1-4020-2193-3_5
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