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DEFECT ENERGY LEVELS IN HIGH-K GATE OXIDES

  • Conference paper
Defects in High-k Gate Dielectric Stacks

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 220))

Abstract

We present calculations of the electrical energy levels of the oxygen vacancy and the oxygen interstitial in HfO2, ZrO2, ZrSiO4 and La2O3. The levels are aligned to those of the Si channel using the known band offsets. In HfO2, the oxygen vacancy gives an energy level in the Si gap or just above the gap, depending on its charge state. This is the main electrically active defect and trap. The oxygen interstitial gives levels just above the oxide valence band, and the neutral interstitial also gives a level near the Si conduction band.

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Author information

Authors and Affiliations

  1. Engineering Dept, Cambridge University, Cambridge, CB2 1PZ, UK

    J. ROBERTSON, K. XIONG & S.J. CLARK

  2. Physics Dept, Durham University, Durham, UK

    S.J. CLARK

Authors
  1. J. ROBERTSON
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  2. K. XIONG
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  3. S.J. CLARK
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  4. S.J. CLARK
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Editor information

Editors and Affiliations

  1. IBM T.J.Watson Research Center, New York, NY, USA

    Evgeni Gusev

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© 2006 Springer

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ROBERTSON, J., XIONG, K., CLARK, S., CLARK, S. (2006). DEFECT ENERGY LEVELS IN HIGH-K GATE OXIDES. In: Gusev, E. (eds) Defects in High-k Gate Dielectric Stacks. NATO Science Series II: Mathematics, Physics and Chemistry, vol 220. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4367-8_14

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  • DOI: https://doi.org/10.1007/1-4020-4367-8_14

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-4365-9

  • Online ISBN: 978-1-4020-4367-3

  • eBook Packages: EngineeringEngineering (R0)

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