Abstract
Most Mn alloys exhibit antiferromagneto properties due to their occupation of 3d orbitals close to half-filling. There are many systems having a complex (non-collinear) magnetic structure, depending on the number of d-electrons and the crystal structure associated with the geometrical frustration of moments. Experimental evaluation of these magnetic structures is quite difficult, and hence there still remain the systems whose magnetic structures have not yet been established. Practically, on the other hand, the appearance of the giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) are very important for electronic and magnetic devices such as magnetic recording heads and magnetic random access memory (MRAM) cells. In these devices, the antiferromagnetic (AFM) Mn alloy systems are useful as an exchange biasing film for the ferromagnetic (FM) film. Therefore, microscopic foundations of the AFM Mn alloys are strongly desired to develop excellent properties for GMR and TMR.
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Sakuma, A., Fukamichi, K. (2006). Antiferromagnetism of Mn Alloys. In: Liu, Y., Sellmyer, D.J., Shindo, D. (eds) Handbook of Advanced Magnetic Materials. Springer, Boston, MA. https://doi.org/10.1007/1-4020-7984-2_21
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