4 Conclusion
In summary, the MIR-OPSL devices presented here provide a remarkable flexibility in designing for any emission wavelength in the 2.5–9.5µm ranges. A very efficient photon-to-photon conversion is maintained across this wavelength range as long as the devices are operated below ∼150K. The fact that many of the device characteristics such as the threshold power and internal efficiency appear to be wavelength independent is probably due to the fact that only the InAs layer thickness is varied by a few monolayers to traverse this large wavelength range. The much-reduced transverse divergence in low confinement devices allows for a beam that is captured with much less effort in a system application. The multi-Watt power levels that are produced are accompanied by a much-improved lateral beam quality, and consequently result in very high brightness levels.
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Kaspi, R., Dente, G.C., Ongstad, A.P. (2006). Optically Pumped MIR Lasers. In: Krier, A. (eds) Mid-infrared Semiconductor Optoelectronics. Springer Series in Optical Sciences, vol 118. Springer, London . https://doi.org/10.1007/1-84628-209-8_9
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