Electron Spin Relaxation in Semiconductors

Abstract

We review recent progress in the understanding of electron spin relaxation mechanisms in zinc-blende semiconductors. Increased spin lifetimes are obtained in structures with special orientation of crystal axes making them suitable for room temperature spintronic devices. In such structures the electron spin lifetime is found to critically depend on spin orientation, which directly affects the design rules for spin devices. We present new calculations concerning the recently introduced intersubband spin relaxation (ISR) mechanism. The mechanism becomes effective at elevated temperatures as scattering between higher electronic subbands starts to occur.