Abstract
This paper proposes body-bias generator for leakage power reduction of digital logic circuits which operates at low supply voltage of 0.5V. The proposed circuit adopts double charge pumping scheme to enhance the pumping gain. The proposed circuit is fabricated using 0.13 μm CMOS process and measurement result demonstrates stable operation with body-bias voltage of -0.95V. We apply the proposed circuit to 64-bit carry look-ahead adder to demonstrate its performance. We report that the leakage power of 64-bit carry look-ahead adder can dramatically be reduced by adopting proposed substratebias generator. The estimated leakage power reduction is 90% (T=75°C).
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References
Chandrakasan, A., Bowhill, W., Fox, F.: Design of High performance Microprocessor Circuits. IEEE Press, Los Alamitos (2000)
Borkar, S.: Design Challenges of Technology Scaling. IEEE MICRO (July-August 1999)
SIA. International Technology Roadmap for Semiconductors (2001)
Mutoh, S., Douskei, T., Matsuya, Y., Aoki, T., Shigematsu, S., Yamada, T.: 1-V Power Supply High-Speed Digital Circuit Technology with Multi-threshold voltage CMOS. IEEE J. Solid state Circuits, 847–854 (August 1995)
Enomoto, T., Oka, Y., Shikano, H.: A Self-Controllable Voltage Level (SVL) Circuit and its Low-Power High-Speed CMOS Circuit Application. IEEE J. Solid state Circuits 38(7) (July 2003)
Kuroda, T., et al.: A 0.9V 150MHz 10mW 4mm2 2-D discrete cosine transform core processor with variable threshold voltage (VT) scheme. IEEE J. Solid state Circuits 31(11), 1770–1779 (1996)
Wang, A., Chadrakasan, A.: Optiamal Supply and Threshold Scaling for Subthreshold CMOS Circuits. In: IEEE Computer Society Annual Symposium on VLSI 2003, April 2002, pp. 5–9 (2002)
Tsukikawa, Y., et al.: An efficient back-bias generator with hybrid pumping circuit for 1.5V DRAM’s. IEEE J. Solid state Circuits 29, 534–538 (1994)
Min, K.S., Chung, J.Y.: A Fast Pump-Down VBB Generator for Sub-1.5V-V DRAMs. IEEE J. Solid state Circuits 36(7), 1154–1157 (2001)
Favrat, P., Deval, P., Declercq, M.: A high-efficiency CMOS voltage doubler. IEEE J. Solid state Circuits 33, 410–416 (1998)
Dickson, J.: On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique. IEEE J. Solid state Circuits SC-11, 374–378 (1976)
Shin, J.S.: A New Charge Pump without Degradation in Threshold Voltage Due to Body Effect. IEEE J. Solid state Circuits 35(8), 1227–1230 (2000)
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© 2006 Springer-Verlag Berlin Heidelberg
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Jeong, JY., Kim, GS., Son, JP., Rim, WJ., Kim, SW. (2006). Body Bias Generator for Leakage Power Reduction of Low-Voltage Digital Logic Circuits. In: Vounckx, J., Azemard, N., Maurine, P. (eds) Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation. PATMOS 2006. Lecture Notes in Computer Science, vol 4148. Springer, Berlin, Heidelberg. https://doi.org/10.1007/11847083_34
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DOI: https://doi.org/10.1007/11847083_34
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-39094-7
Online ISBN: 978-3-540-39097-8
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