A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET

Ertler, C.; Schürrer, F.; Muscato, O.

doi:10.1007/3-540-28073-1_14

C. Ertler,
F. Schürrer² &
O. Muscato³

Part of the book series: Mathematics in Industry ((TECMI,volume 8))

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Summary

A deterministic solution method for the coupled Boltzmann-Poisson system regarding spatially two-dimensional problems is presented. The method is based on a discontinuous piecewise polynomial approximation of the carrier distribution function. The conduction band of silicon is modelled by a non-parabolic six-valley model. In particular, we applied the multicell method to simulate the transients of a silicon MESFET. The results are compared to Monte Carlo simulations.

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References

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Authors and Affiliations

Institute of Theoretical and Computational Physics, Graz University of Technology, Graz, Austria
F. Schürrer
Dipartimento di Matematica e Informatica, Università di Catania, Catania, Italy
O. Muscato

Authors

C. Ertler
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F. Schürrer
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O. Muscato
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Editors and Affiliations

Department of Mathematics and Computer Science, Technische Universiteit Eindhoven, Postbus 513, 5600 MB, Eindhoven, The Netherlands
A. Di Bucchianico , R.M.M. Mattheij & M.A. Peletier , &

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Ertler, C., Schürrer, F., Muscato, O. (2006). A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET. In: Di Bucchianico, A., Mattheij, R., Peletier, M. (eds) Progress in Industrial Mathematics at ECMI 2004. Mathematics in Industry, vol 8. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-28073-1_14

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DOI: https://doi.org/10.1007/3-540-28073-1_14
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-28072-9
Online ISBN: 978-3-540-28073-6
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