Summary
We assess, in this paper, the use of CMOS technology (Complementary-Metal-Oxide-Semiconductor) for the fabrication of fast wavefront sensors based on the Hartmann-Shack technique. We briefly recapitulate the core of this technology and we point out its pros and cons with respect to the sensor performance. Focusing on fast operation, we compare conventional image sensors with custom layout approaches that make use of position-sensitive detectors (PSDs). We also present the results obtained with three different CMOS sensor concepts implemented so far:
Heidelberg1: 0.6 μm — AMS — 16 × 16-PSDs alternate — winner-take-all digital readout
Heidelberg2: 0.35 μm — AMS — 8 × 8-PSDs chessboard-like — winner-take-all / resistive ring [2]
Delft1: 1.6 μm — DIMES — 8 × 8-PSDs quad cell — passive pixels [3, 4] The aim is to identify the practical capabilities of standard CMOS technology in wavefront sensing.
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© 2005 Springer-Verlag Berlin Heidelberg
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de Lima Monteiro, D., Nirmaier, T. (2005). CMOS Technology in Hartmann-Shack Wavefront Sensing. In: Wittrock, U. (eds) Adaptive Optics for Industry and Medicine. Springer Proceedings in Physics, vol 102. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-28867-8_18
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DOI: https://doi.org/10.1007/3-540-28867-8_18
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-23978-9
Online ISBN: 978-3-540-28867-1
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