Abstract
The strain state and the deformation profile of GaN quantum dots embedded in AlN have been measured by high resolution electron microscopy, medium energy ion scattering and grazing incidence X-ray diffraction. The results are compared with theoretical calculations, allowing one to conclude that GaN quantum dots experience a non biaxial strain which drastically decreases when going from the basal plane up to the apex of the dots. We also demonstrate that AlN is distorted in the surroundings of the dots, which provides the driving force for vertical correlation of GaN dots when the AlN spacer between successive planes is thin enough.
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Daudin, B. et al. (2005). Structural properties of GaN quantum dots. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_1
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DOI: https://doi.org/10.1007/3-540-31915-8_1
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
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