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Wet Chemical Approaches for Chemical Functionalization of Semiconductor Nanostructures

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Electrochemistry at the Nanoscale

Part of the book series: Nanostructure Science and Technology ((NST))

Abstract

As there are already several reports and reviews dealing with chemical modification of crystalline and nanocrystalline surfaces in the literature [1–9], this book chapter is organized in several parts dealing with the progress made in nanocrystalline silicon and germanium surface modification with a special focus on: (1) methods for the preparation of hydrogen-terminated porous silicon, different strategies developed for organic layers formation, their characterization, and some examples of their applications; (2) techniques for porous germanium preparation, characterization, and surface modification; and (3) conclusions and perspectives.

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Acknowledgements

The authors are grateful for the permissions from Elsevier, ACS, and AIP for providing useful material in the chapter. The Centre National de la Recherche Scientifique (CNRS) and the Nord-Pas-de Calais region are gratefully acknowledged for financial support.

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Boukherroub, R., Szunerits, S. (2009). Wet Chemical Approaches for Chemical Functionalization of Semiconductor Nanostructures. In: Schmuki, P., Virtanen, S. (eds) Electrochemistry at the Nanoscale. Nanostructure Science and Technology. Springer, New York, NY. https://doi.org/10.1007/978-0-387-73582-5_5

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