Abstract
The addition of a small percentage of nitrogen to GaSb or InSb is predicted to move their response wavelengths into the long wavelength IR range due to the influence of band-gap bowing. We report the growth of GaNxSb1−x and InNxSb1−x by MBE, using an r.f. plasma nitrogen source. We demonstrate high structural quality, as determined by XRD, and FTIR absorption measurements show a shift in the cut-off wavelength to over 3 μm for GaNSb and over 11 μm for InNSb, allowing for the effect of Moss-Burstein band filling.
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References
M. Weyers, M. Sato and H. Ando, Jpn. J. Appl. Phys., 31, L853–L855 (1992)
W. Shan, W. Walukiewicz et al, Phys. Rev. Lett., 82, 1221–1224 (1999)
T. Ashley, L. Buckle, G. W. Smith, B. N. Murdin, P. H. Jefferson, L. F. J. Piper, T. D. Veal and C. F. McConville, Proc. SPIE, 6206, 62060L (2006)
P. H. Jefferson, L. Buckle, D. Walker, T. D. Veal, S. Coomber, P. A. Thomas, T. Ashley, C. F. McConville, Phys. Stat. Sol (RRL), 3, 104–106 (2007)
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Coomber, S.D. et al. (2008). Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_12
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DOI: https://doi.org/10.1007/978-1-4020-8425-6_12
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8424-9
Online ISBN: 978-1-4020-8425-6
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