Investigating the Capping of InAs Quantum Dots by InGaAs

Liew, S L; Walther, T; Irsen, S; Hopkinson, M; Skolnick, M S; Cullis, A G

doi:10.1007/978-1-4020-8615-1_57

S L Liew³,
T Walther⁴,
S Irsen⁵,
M Hopkinson⁴,
M S Skolnick⁴ &
…
A G Cullis⁴

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 120))

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Summary

The aim of this work is to investigate the capping of InAs quantum dots by InGaAs using atomic force microscopy in plan-view geometry and correlate this topographical information with scanning transmission electron microscopy observations that elucidate the microstructure and chemistry of these quantum dots. Preferential growth of the Ga-rich cap around dot islands may be due to the unfavourable lattice parameter associated with high In concentrations at dot apices.

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References

Arakawa Y and Sakaki H 1982 Appl. Phys. Lett. 40, 939
Article ADS CAS Google Scholar
Ustinov V M et al 1999 Appl. Phys. Lett. 74, 2815
Article ADS CAS Google Scholar
Seravalli L, Frigeri P, Minelli M, Allegri P, Avanzini V and Franchi S 2005 Appl. Phys. Lett. 87, 063101
Article ADS CAS Google Scholar
Lester L F, Stintz A, Li H, Newell T C, Pease E A, Fuchs B A and Malloy K J 1999 IEEE Photonics Tech. Lett. 11, 931
Article Google Scholar
Walther T, Cullis A G, Norris D J and Hopkinson M 2001 Phys Rev. Lett. 86, 2381
Article PubMed ADS CAS Google Scholar

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Authors and Affiliations

Dept. of Physics and Astronomy, Univ. of Sheffield, Hounsfield Road, Sheffield S3 7RH, UK
S L Liew
Dept. of Electronic and Electrical Eng., Univ. of Sheffield, Mappin Street, Sheffield S1 3JD, UK
T Walther, M Hopkinson, M S Skolnick & A G Cullis
Center of Advanced European Studies and Research (CAESAR), Ludwig-Erhard-Allee 2, 53175-Bonn, Germany
S Irsen

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S L Liew
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T Walther
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S Irsen
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M Hopkinson
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M S Skolnick
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A G Cullis
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Editors and Affiliations

Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK
A. G. Cullis
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
P. A. Midgley

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Liew, S., Walther, T., Irsen, S., Hopkinson, M., Skolnick, M., Cullis, A. (2008). Investigating the Capping of InAs Quantum Dots by InGaAs. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_57

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DOI: https://doi.org/10.1007/978-1-4020-8615-1_57
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8614-4
Online ISBN: 978-1-4020-8615-1
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