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Semiconductor p-n and Metal-Semiconductor Junctions

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Abstract

Until now, our discussion was based solely on homogeneous semiconductors whose properties are uniform in space. Although a few devices can be made from such semiconductors, the majority of devices and the most important ones utilize non-homogeneous semiconductor structures. Most of them involve semiconductor p-n junctions, in which a p-type doped region and an n-type doped region are brought into contact. Such a junction actually forms an electrical diode. This is why it is usual to talk about a p-n junction as a diode.

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Further reading

  • Ashcroft, N.W. and Mermin, N.D., Solid State Physics, Holt, Rinehart and Winston, New York, 1976.

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  • Neudeck, G.W., The PN Junction Diode, Addison-Wesley, Reading, MA, 1989.

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  • Pierret, R.F., Advanced Semiconductor Fundamentals, Addison-Wesley, Reading, MA, 1989.

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  • Sapoval, B. and Hermann, C., Physics of Semiconductors, Springer-Verlag, New York, 1995.

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  • Streetman, B.G., Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, NJ, 1990.

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  • Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.

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  • Wang, S., Fundamentals of Semiconductor Theory and Device Physics, Prentice-Hall, Englewood Cliffs, NJ, 1989.

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Razeghi, M. (2010). Semiconductor p-n and Metal-Semiconductor Junctions. In: Technology of Quantum Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1056-1_4

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