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Electronic Structure of Defects in Amorphous SiO2

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The Physics and Technology of Amorphous SiO2

Abstract

The electronic structure, local bonding and reactions of the principal intrinsic point defects and some impurities (H2O, H, B, N, Ga, Ge, P, As) in amorphous silicon dioxide are reviewed.

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Author information

Authors and Affiliations

  1. Central Electricity Research Laboratories, Leatherhead, KT22 7SE, UK

    J. Robertson

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  1. J. Robertson
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Editor information

Editors and Affiliations

  1. National Center for Telecommunications Studies, Meyland, France

    Roderick A. B. Devine

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© 1988 Plenum Press, New York

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Robertson, J. (1988). Electronic Structure of Defects in Amorphous SiO2 . In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_10

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  • DOI: https://doi.org/10.1007/978-1-4613-1031-0_10

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-8301-0

  • Online ISBN: 978-1-4613-1031-0

  • eBook Packages: Springer Book Archive

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