Abstract
The compounds of transition metals with oxygen and other elements of group 16 have an exceedingly diverse range of electronic properties. They include wide bandgap insulators, semiconductors, metals, and superconductors. Associated with their electronic structure are other properties such as magnetic and optical ones that find important applications. Understanding such a wide range of electronic structure requires a broad selection of models and leads frequently to controversy about which one is appropriate [1,2]. The band model—which envisages quasi-independent electron states extending throughout the crystal in accordance with translational symmetry—is generally appropriate for metallic conductors, including the low dimensional materials which are the subject of this volume. There are however many interactions, such as the influence of defects, disorder, and inter-electron repulsion, which can cause electron states to be more localised than the band model suggests.
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© 1996 Plenum Press, New York
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Cox, P.A. (1996). The Electronic Structure of Transition Metal Oxides and Chalcogenides. In: Schlenker, C., Dumas, J., Greenblatt, M., van Smaalen, S. (eds) Physics and Chemistry of Low-Dimensional Inorganic Conductors. NATO ASI Series, vol 354. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1149-2_15
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DOI: https://doi.org/10.1007/978-1-4613-1149-2_15
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