Abstract
Recent research is classified and surveyed on film crystallization and epitaxy from ion-molecular beams. Experimental results on low-temperature ion-molecular epitaxy for semiconductors are examined: effects of ion type, current density, energy spectrum, and other parameters. Studies have also been made on the effects of ion bombardment related to energy, momentum, and charge transfer to the substrate as regards the chemical purity of the surface, the defect density, and the surface charge, which influence nucleation, surface diffusion, nucleus coalescence, and so on. The possible mechanisms for ion-molecular epitaxy are discussed.
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© 1987 Springer Science+Business Media New York
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Lyutovich, A.S. (1987). Ion-Molecular Epitaxy. In: Givargizov, E.I. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7122-3_4
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DOI: https://doi.org/10.1007/978-1-4615-7122-3_4
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