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Electrical and Structural Changes in Ion-Bombarded TiO2

(Studies on bombardment-enhanced conductivity — II)

  • Chapter
Ion Implantation in Semiconductors and Other Materials

Part of the book series: The IBM Research Symposia Series ((IRSS))

Abstract

A study of the electrical and structural changes occurring in ion-bombarded TiO2 has been undertaken. The conductivity induced by 30-keV Kr was shown to develop in three fairly distinct regions:

  • Region I: Incubation period lasting to 6x1015 ions/cm2, during which the conductivity remains near the initial value of about 1.5x10-7 ohm-1.

  • Region II: Rapid increase of conductivity to about 5×10-5 ohm-1 at 8x1016 ions/cm2.

  • Region III: Slow approach of the conductivity to a saturation level of about 1×10-4 ohm-1 for doses beyond 8x1016 ions/cm2.

The concurrent structural changes were determined using reflection electron diffraction, and revealed the amorphization of the initially rutile-type TiO2 (Region I), the growth of small regions of Ti2O3 (Region II), and the complete transformation of the surface to polycrystalline Ti2O3 (Region III).

The increased conductivity may be adequately explained in terms of the formation of Ti2O3. Thus, assuming that the altered layer extends to a depth equal to twice the mean projected range of the bombarding species (~ 230 Å), the value 1×10-4 ohm-1 corresponds to 1x101 ohm-1cm-1. This compares well with the range of values 1×101 to l×102 ohm-lcm-1 as given elsewhere for Ti2O3. The mechanism responsible for the formation of Ti2O3 cannot be specified with certainty, though it is shown that thermal-spike vaporization is inadequate. In effect, the reaction 2TiO2(s) = Ti2O3(s) + ½O2(g) has too low an oxygen pressure to occur to a significant extent at the surface near an impact. This leaves internal precipitation of O2 or preferential oxygen sputtering as possible mechanisms.

Supported by grants from the Geological Survey of Canada, Ottawa, and the Defence Research Board, Ottawa.

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Authors and Affiliations

  1. Institute for Materials Research, McMaster University, Hamilton, Ontario, Canada

    Thomas Parker & Roger Kelly

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  1. Thomas Parker
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  2. Roger Kelly
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Editors and Affiliations

  1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA

    Billy L. Crowder

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© 1973 Plenum Press, New York

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Parker, T., Kelly, R. (1973). Electrical and Structural Changes in Ion-Bombarded TiO2 . In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_48

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  • DOI: https://doi.org/10.1007/978-1-4684-2064-7_48

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-2066-1

  • Online ISBN: 978-1-4684-2064-7

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