Abstract
This paper presents a review of the theory of impurity states in superlattice semiconductors. First of all, a brief description is given of the effective-mass theory for shallow impurities in bulk semiconductors. A modification of the method is described to deal with hydrogenic donor states in a quantum well. A further modification of the method is described which allows for donor level calculations in a superlattice or a multiple quantum well. For calculating acceptor levels in quantum wells a multiband effective-mass theory is described. Finally, a self-consistent method, within the local-density and effective-mass approximations, is described for calculating electronic subband structure in the n-type layers of a n-i-p-i crystal.
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© 1988 Plenum Press, New York
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Srivastava, G.P. (1988). Theory of Impurity States in Superlattice Semiconductors. In: Fong, C.Y., Batra, I.P., Ciraci, S. (eds) Properties of Impurity States in Superlattice Semiconductors. NATO ASI Series, vol 183. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5553-3_16
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DOI: https://doi.org/10.1007/978-1-4684-5553-3_16
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