Abstract
Deep level measurements have been performed on three different types of sample: (l)Sn-doped layers diffused into SI-GaAs:Cr; (2) Sn-doped LPE-GaAs layers on SI-GaAs:Cr; and (3) Sn-doped layers diffused into high resistivity undoped LPE layers on SI-GaAs:Cr. Measurement technique was the PHOTOFET method [1], which monitors changes in Ids of a MESFET with respect to the energy of monochromatic light. The characteristics of the three types of sample are presented and related to trap behaviour, especially near interfaces. Deep traps at the interfaces between active layers and substrates may cause serious degradation of device performance. It appears that a buffer layer (sample type 3) is not always a good way of improving device behaviour.
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© 1980 F.J. Tegude and K. Heime
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Tegude, F.J., Heime, K. (1980). Deep Level Measurements of Layers on Semi-Insulating GaAs Substrates by Means of the Photofet Method. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_43
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DOI: https://doi.org/10.1007/978-1-4684-9193-7_43
Publisher Name: Birkhäuser Boston
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