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Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices

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Computational Electronics

Part of the book series: The Springer International Series in Engineering and Computer Science ((SECS,volume 113))

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Abstract

We performed Monte Carlo simulations taking into account all scattering mechanisms in InP and the presence of an inhomogeneous electric field. We report that: 1) the drifted Maxwellian distribution used in many publications is reliable only for long samples; 2) in addition to the boundary conditions at the cathode, the anode boundary condition becomes important in short devices; 3) Negative Differential Energy (NDE) occurs in the Negative Differential Conductivity (NDC) regime in InP (i.e. cooling of the electron gas by the electric field take place) ; 4) the critical electric field for NDE is somewhat higher than the critical electric field for NDC.

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© 1991 Springer Science+Business Media New York

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Mitin, V.V., Shaw, M.P., Ivastchenko, V.M., Wu, K.F. (1991). Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices. In: Hess, K., Leburton, J.P., Ravaioli, U. (eds) Computational Electronics. The Springer International Series in Engineering and Computer Science, vol 113. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2124-9_35

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  • DOI: https://doi.org/10.1007/978-1-4757-2124-9_35

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4419-5122-9

  • Online ISBN: 978-1-4757-2124-9

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