Abstract
Scanning tunneling microscopy (STM) and spectroscopy have been used to characterize the structural and electronic properties of diamond films grown using hot tungsten filament and microwave plasma chemical vapor deposition. The hot-filament-grown films contained microcrystallites measuring 50 nm, while the microwave-plasma-grown films contained larger crystallites measuring 500 nm. STM tunneling current versus voltage (I-V) curves for the hot-filament-grown films exhibit a zero-current region about the Fermi level corresponding to a surface band gap of 4.1 eV, to be compared with the bulk band gap of diamond of 5.45 eV. The surface electronic density of states computed from these I-V curves is in good agreement with x-ray photoelectron and appearance potential spectroscopies. The I-V curves for the microwave plasma grown films exhibit rectifying behavior in good agreement with a Schottky model for surface band bending.
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Perez, J.M. et al. (1994). Scanning Tunneling Microscopy of the Structural and Electronic Properties of Chemical-Vapor Deposited Diamond Films. In: Cohen, S.H., Bray, M.T., Lightbody, M.L. (eds) Atomic Force Microscopy/Scanning Tunneling Microscopy. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9322-2_21
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DOI: https://doi.org/10.1007/978-1-4757-9322-2_21
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