Abstract
In 1962, shortly after the discovery of the Mössbauer effect in 1958, two papers were published1,2 on the characterization of impurity atoms in semiconductors by Mössbauer spectroscopy. Both dealt with 57Fe in silicon and germanium. In the 25 years that have passed since, more than 500 Mössbauer papers have been published on semiconductors. In Mössbauer spectroscopy experiments, the nucleus of the Mössbauer isotope acts as an extremely sensitive microscopic probe inside the semiconductor. From the study of the radiation emitted or absorbed without recoil by this nucleus, the symmetry and density of the surrounding electron configuration and the vibrational properties of the solid in which it is imbedded can be obtained.
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References
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Langouche, G. (1989). Characterization of Semiconductors by Mössbauer Spectroscopy. In: Long, G.J., Grandjean, F. (eds) Mössbauer Spectroscopy Applied to Inorganic Chemistry. Modern Inorganic Chemistry, vol 3. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2289-2_10
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