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Physics of Heterostructures and Heterostructure Devices

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The Physics of Submicron Semiconductor Devices

Part of the book series: NATO ASI Series ((NSSB,volume 180))

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Abstract

This topic belongs to the broader one of scale-dependent properties of inhomogeneous semiconductors. Most semiconductor devices depend on characteristic lengths, such as screening constant, carrier recombination length, inverse of pair creation rate, and their functioning is based on spatial inhomogeneities. The bipolar junction transistor is made by inhomogeneous doping of a semiconductor; and the field-effect transistor has a conducting channel controlled by the “gate” field at the interface of the semiconductor with an insulator, commonly a silicon/(silicon oxide) interface. In these — as in the semiconductor laser — a controlled inhomogeneity supports semiconductor phenomena that depend on this spatial structure.

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Author information

Authors and Affiliations

  1. IBM T. J. Watson Research Center, Yorktown Heights, New York, NY, 10598, USA

    Peter J. Price

Authors
  1. Peter J. Price
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Editor information

Editors and Affiliations

  1. Scientific Research Associates, Inc., Glastonbury, Connecticut, USA

    Harold L. Grubin

  2. Arizona State University, Tempe, Arizona, USA

    David K. Ferry

  3. Institute of Physics, University of Modena, Modena, Italy

    C. Jacoboni

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© 1988 Springer Science+Business Media New York

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Price, P.J. (1988). Physics of Heterostructures and Heterostructure Devices. In: Grubin, H.L., Ferry, D.K., Jacoboni, C. (eds) The Physics of Submicron Semiconductor Devices. NATO ASI Series, vol 180. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2382-0_13

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  • DOI: https://doi.org/10.1007/978-1-4899-2382-0_13

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-2384-4

  • Online ISBN: 978-1-4899-2382-0

  • eBook Packages: Springer Book Archive

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