Abstract
This chapter deals with random telegraph noise (RTN) under switching operation. We measured and modeled RTN by using ring oscillator-based (RO-based) test chips. They were fabricated in three different processes of 65 nm bulk, 65 nm FDSOI, and 40 nm bulk. Measurements are performed for ROs of different topology, gate width, and stage number under different supply voltage, substrate bias, and temperature. Measurement results reveal valuable insights into the impact of RTN on the reliability of logic circuits. We have also shown the variability change according to gate width, stage number, and supply voltage. We presented design methodology of a test structure so as to extract RTN parameters, which is used to develop a Verilog-AMS model.
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Kobayashi, K., Islam, M., Matsumoto, T., Kishida, R. (2020). Random Telegraph Noise Under Switching Operation. In: Grasser, T. (eds) Noise in Nanoscale Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-030-37500-3_9
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