Abstract
Heterostructures are the most important basis for modern devices and are covered regarding various aspects including heteroepitaxy on planar and patterned substrates, surfactants, heterostructure band lineup as well as energy levels and recombination in planar confined systems (quantum wells and two-dimensional electron gases).
The interface is the device.
H. Kroemer [961]
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Notes
- 1.
In the ‘US’ flat definition, the primary flat is the \((01 \bar{1})\) surface, in the ‘EJ’ definition, the primary flat is \((0 \bar{1} \bar{1})\).
- 2.
This is the growth mode of self-assembled epitaxial quantum dots as discussed in Sect. 14.3.3.
- 3.
For ZnO, homosubstrates have recently been produced with 3-inch diameter [1003].
- 4.
The kinetic energy term in (12.5) is written as \(\frac{\hbar ^2}{2} \, \frac{\partial }{\partial z} \frac{1}{m^*(z)} \frac{\partial \chi }{\partial z}\) for varying mass across the structure [1041].
- 5.
neglecting excitonic enhancement.
- 6.
The error function is defined as \(\mathrm {erf}(x)=(2/\sqrt{\pi }) \int _0^z {\exp {-t^2} \, \mathrm {d}t}\).
- 7.
Formula (12.11) is exact for the product of a Gaussian and the Boltzmann function.
- 8.
Only modes with odd m are Raman-active.
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Grundmann, M. (2016). Heterostructures. In: The Physics of Semiconductors. Graduate Texts in Physics. Springer, Cham. https://doi.org/10.1007/978-3-319-23880-7_12
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DOI: https://doi.org/10.1007/978-3-319-23880-7_12
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