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Quantum Transport Simulation of III-V TFETs with Reduced-Order \( \varvec{k} \cdot \varvec{p} \) Method

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Tunneling Field Effect Transistor Technology

Abstract

III-V tunnel field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large “on” current. Their 3D quantum transport study using non-equilibrium Green’s function method is computationally very intensive, in particular when combined with multiband approaches such as the eight-band \( \varvec{k} \cdot \varvec{p} \) method . To reduce the numerical cost, an efficient reduced-order method is developed in this chapter and applied to study homojunction InAs and heterojunction GaSb–InAs nanowire TFETs. Device performances are obtained for various channel widths, channel lengths, crystal orientations, doping densities, source–pocket lengths, and strain conditions.

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Acknowledgment

The use of nanoHUB.org computational resources operated by the Network for Computational Nanotechnology funded by the US National Science Foundation under Grant Nos. EEC-0228390, EEC-1227110, EEC-0228390, EEC-0634750, OCI-0438246, OCI-0832623, and OCI-0721680 is gratefully acknowledged.

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Authors and Affiliations

  1. Network for Computational Nanotechnology, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA

    Jun Z. Huang, Pengyu Long, Michael Povolotskyi & Gerhard Klimeck

  2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong

    Lining Zhang

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  1. Jun Z. Huang
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  3. Pengyu Long
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Correspondence to Jun Z. Huang .

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Editors and Affiliations

  1. and Technology, Hong Kong University of Science, Hong Kong, China

    Lining Zhang

  2. and Technology, Hong Kong University of Science, Hong Kong, China

    Mansun Chan

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Huang, J.Z., Zhang, L., Long, P., Povolotskyi, M., Klimeck, G. (2016). Quantum Transport Simulation of III-V TFETs with Reduced-Order \( \varvec{k} \cdot \varvec{p} \) Method. In: Zhang, L., Chan, M. (eds) Tunneling Field Effect Transistor Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-31653-6_6

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  • DOI: https://doi.org/10.1007/978-3-319-31653-6_6

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