Abstract
Nanostructures and nanomaterials with their meso-scopic properties, which can be integrated into functional devices, will enable a variety of new applications in future. They can be grown with specific properties by plenty of physical and chemical methods, and subsequent modification using ion irradiation significantly expands the potpourri of functionality of this important material class. As the ion range becomes comparable to the size of the small structures, important effects must be considered in experimental planning: reduced incorporation of implanted species, morphological changes induced by point defects, as well as strongly enhanced dynamic annealing and sputtering.
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References
J.F. Ziegler, J.P. Biersack, U. Littmark, Stopping and Range of Ions in Solids (Pergamon, New York, 1985)
A. Mutzke, R. Schneider, W. Eckstein, R. Dohmen, SDTrimSP version 5.00. IPP Report 12/8, Max-Planck-Institut für Plasmaphysik, Garching, Germany (2011)
W. Möller, W. Eckstein, Nucl. Instr. Meth. B 2, 814 (1984)
T.T. Järvi, J.A. Pakarinen, A. Kuronen, K. Nordlund, Europhys. Lett. 82, 26002 (2008). doi:10.1209/0295-5075/82/26002
G. Greaves, J.A. Hinks, P. Busby, N.J. Mellors, A. Ilinov, A. Kuronen, K. Nordlund, S.E. Donnelly, Phys. Rev. Lett. 111, 65504 (2013). doi:10.1103/PhysRevLett.111.065504
W. Boxleitner, G. Hobler, Nucl. Instr. Meth. B 180, 125 (2001)
H.B. Kim, G. Hobler, A. Steiger, A. Lugstein, E. Bertagnolli, Nanotechnology 18, 245303 (2007)
G. Hobler, S. Selberherr, IEEE Trans. Comput. Aided Des. Integr. Circuits Sys. 8, 450 (1989). doi:10.1109/43.24873
B.J. Obradovic, G. Balamurugan, G. Wang, Y. Chen, A.F. Tasch, in International Electron Devices Meeting, 1998. IEDM ‘98 Technical Digest. (1998), pp. 513–516. doi:10.1109/IEDM.1998.746410
H. Stippel, S. Selberherr, in Proceedings of VPAD (1993), pp. 122–123. URL http://in4.iue.tuwien.ac.at/pdfs/vpad1993/pdfs/00724750.pdf
A. Burenkov, K. Tietzel, A. Hossinger, J. Lorenz, H. Ryssel, S. Selberherr, in International Conference on Simulation of Semiconductor Processes and Devices (IEEE, 1999), pp. 55–58, 6–8 September 1999. doi:10.1109/SISPAD.1999.799258
B. Yuan, F. Yu, S. Tang, Nucl. Instr. Meth. B 83, 413 (1993)
F. Schiettekatte, Nucl. Instr. Meth. B 266, 1880 (2008)
C. Borschel, C. Ronning, Nucl. Instr. Meth. B 269, 2133 (2011). doi:10.1016/j.nimb.2011.07.004
Iradina, Download page (2013). URL http://www.iradina.de
R. Collins, A. Prez-Martn, J. Domnguez-Vzquez, J. Jimnez-Rodrguez, Nucl. Instr. Meth. B 90, 433 (1994). doi:10.1016/0168-583X(94)95588-3
W. Möller, Nucl. Instr. Meth. B 322, 23 (2014). doi:10.1016/j.nimb.2013.12.027
D. Kunder, E. Baer, M. Sekowski, P. Pichler, M. Rommel, Microelectr. Eng. 87, 1597 (2010)
H.M. Urbassek, R.M. Bradley, M.L. Nietiadi, W. Möller, Phys. Rev. B 91, 165418 (2015). doi:10.1103/PhysRevB.91.165418
S. Dhara, A. Datta, C.T. Wu, Z.H. Lan, K.H. Chen, Y.L. Wang, L.C. Chen, C.W. Hsu, H.M. Lin, C.C. Chen, Appl. Phys. Lett. 82, 451 (2003). doi:10.1063/1.1536250
C. Borschel, Ion-solid interaction in semiconductor nanowires, Dissertation, University of Jena, 2012. URL http://www.db-thueringen.de/servlets/DocumentServlet?id=20026
C. Borschel, M.E. Messing, M.T. Borgström, W. Paschoal, J. Wallentin, S. Kumar, K. Mergenthaler, K. Deppert, C.M. Canali, H. Pettersson, L. Samuelson, C. Ronning, Nano Lett. 11, 3935 (2011). doi:10.1021/nl2021653
R.A. Brown, J.S. Williams, J. Appl. Phys. 81, 7681 (1997). doi:10.1063/1.365347
Memsnet materials database (2012). URL www.memsnet.org
C. Lieber, Z. Wang (eds.), Functional Nanowires, vol. 32 (2007)
C. Jagadish (ed.), Special issue on Nanowires, vol. 25 (2010)
C. Ning, Phys. Stat. Sol. B 247, 774 (2010)
R.S. Wagner, W.C. Ellis, Appl. Phys. Lett. 4, 89 (1964)
C. Borchers, S. Müller, D. Stichtenoth, D. Schwen, C. Ronning, J. Phys. Chem. B 110, 1656 (2006)
K.A. Dick, K. Deppert, T. Martensson, B. Mandl, L. Samuelson, W. Seifert, Nano Lett. 5, 761 (2005)
J. Johansson, C.P.T. Svensson, T. Martensson, L. Samuelson, W. Seifert, J. Phys. Chem. B 109, 13567 (2005)
M.V. Fernandez-Serra, C. Adessi, X. Blase, Phys. Rev. Lett. 96, 166805 (2006)
P. Xie, Y. Hu, Y. Fang, J. Huang, C.M. Lieber, Proc. Natl. Acad. Sci. USA 106, 15254 (2009). doi:10.1073/pnas.0906943106
D.E. Perea, E.R. Hemesath, E.J. Schwalbach, J.L. Lensch-Falk, P.W. Voorhees, J.L. Lauhon, Nature Nanotechnol. 4, 315 (2009). doi:10.1038/nnano.2009.51
S.J. Whang, S. Lee, D.Z. Chi, W.F. Yang, B.J. Cho, Y.F. Liew, D.L. Kwong, Nanotechnology 18, 275302 (2007). doi:10.1088/0957-4484/18/27/275302
C. Ronning, C. Borschel, S. Geburt, R. Niepelt, Mat. Sci. Eng. R. R. 70, 30 (2010). doi:10.1016/j.mser.2010.07.002
C. Ronning, C. Borschel, S. Geburt, R. Niepelt, S. Müller, D. Stichtenoth, J.P. Richters, A. Dev, T. Voss, L. Chen, W. Heimbrodt, C. Gutsche, W. Prost, Phys. Stat. Sol. B 247, 2329 (2010). doi:10.1002/pssb.201046192
A. Colli, A. Fasoli, C. Ronning, S. Pisana, S. Piscanec, A.C. Ferrari, Nano Lett. 8, 2188 (2008)
S. Hoffmann, J. Bauer, C. Ronning, T. Stelzner, J. Michler, C. Ballif, V. Sivakov, S.H. Christiansen, Nano Lett. 9, 1341 (2009). doi:10.1021/nl802977m
P.D. Kanungo, R. Kögler, K. Nguyen-Duc, N. Zakharov, P. Werner, U. Gösele, Nanotechnology 20, 165706 (2009). doi:10.1088/0957-4484/20/16/165706
T. Hirate, S. Sasaki, W. Li, H. Miyashita, T. Kimpara, T. Satoh, Thin Solid Films 487, 35 (2005). doi:10.1016/j.tsf.2005.01.031
B. Cheng, Y. Xiao, G. Wu, L. Zhang, Adv. Funct. Mater. 14, 913 (2004). doi:10.1002/adfm.200305097
S. Geburt, D. Stichtenoth, S. Müller, W. Dewald, C. Ronning, J. Wang, Y. Jiao, Y.Y. Rao, S.K. Hark, Q. Li, J. Nanosci. Nanotechnol. 8, 244 (2008). doi:10.1166/jnn.2008.N05
C. Ronning, P.X. Gao, Y. Ding, Z.L. Wang, D. Schwen, Appl. Phys. Lett. 84, 783 (2004). doi:10.1063/1.1645319
G. Dieke, Spectra and Energy levels of Rare Earth Ions in Crystals (Interscience Publishers, New York, 1968)
C. Cascales, M.D. Serrano, F. Esteban-Betegón, C. Zaldo, R. Peters, K. Petermann, G. Huber, L. Ackermann, D. Rytz, C. Dupré, M. Rico, J. Liu, U. Griebner, V. Petrov, Phys. Rev. B 74, 174114 (2006). doi:10.1103/PhysRevB.74.174114
S. Bachir, J. Ronfard-Haret, K. Azuma, D. Kouyat, J. Kossanyi, Chem. Phys. Lett. 213, 54 (1993). doi:10.1016/0009-2614(93)85417-M
H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, Appl. Phys. Lett. 69, 363 (1996). doi:10.1063/1.118061
W. Ren, A. Kuronen, K. Nordlund, Phys. Rev. B 86, 104114 (2012). doi:10.1103/PhysRevB.86.104114
C. Borschel, R. Niepelt, S. Geburt, C. Gutsche, I. Regolin, W. Prost, F.J. Tegude, D. Stichtenoth, D. Schwen, C. Ronning, Small 5, 2576 (2009). doi:10.1002/smll.200900562
C. Borschel, S. Spindler, D. Lerose, A. Bochmann, S.H. Christiansen, S. Nietzsche, M. Oertel, C. Ronning, Nanotechnology 22, 185307 (2011). doi:10.1088/0957-4484/22/18/185307
L. Romano, N.G. Rudawski, M.R. Holzworth, K.S. Jones, S.G. Choi, S.T. Picraux, J. Appl. Phys. 106, 114316 (2009). doi:10.1063/1.3267154
K. Jun, J. Joo, J.M. Jacobson, J. Vac. Sci. Tech. B 27, 3043 (2009). doi:10.1116/1.3259919
D. Stichtenoth, Dimensionseffekte in Halbleiternanodrähten, Dissertation, University of Göttingen, 2008. URL http://webdoc.sub.gwdg.de/diss/2008/stichtenoth/
O. Dmitrieva, B. Rellinghaus, J. Kästner, M.O. Liedke, J. Fassbender, J. Appl. Phys. 97, 10N112 (2005). doi:10.1063/1.1853211
A. Klimmer, P. Ziemann, J. Biskupek, U. Kaiser, M. Flesch, Phys. Rev. B 79, 155427 (2009). doi:10.1103/PhysRevB.79.155427
H. Holland-Moritz, S. Scheeler, C. Stanglmair, C. Pacholski, C. Ronning, Nanotechnology 26, 325301 (2015). doi:10.1088/0957-4484/26/32/325301
W. Möller, K.H. Heinig, Collisional transport in ion-irradiated nanowires. Personal communication (2015)
A. Johannes, High-fluence ion beam irradiation of semiconductor nanowires, Dissertation, University of Jena, 2015
A. Johannes, S. Noack, W. Paschoal, S. Kumar, D. Jacobsson, H. Pettersson, L. Samuelson, K.A. Dick, G. Martinez-Criado, M. Burghammer, C. Ronning, J. Phys. D Appl. Phys. 47, 394003 (2014). doi:10.1088/0022-3727/47/39/394003
A. Johannes, S. Noack, W. Paschoal, S. Kumar, D. Jacobsson, H. Pettersson, L. Samuelson, K.A. Dick, G. Martinez-Criado, M. Burghammer, C. Ronning, J. Phys. D Appl. Phys. 48, 079501 (2015). doi:10.1088/0022-3727/48/7/079501
Acknowledgements
We thank Dr. Raphael Niepelt and Dr. Sebastian Geburt for planning, performing and evaluating many of the nanowire implantation experiments presented here. Furthermore, we thank Prof. Dr. Wolfhard Möller for valuable discussion about the simulation codes and Dr.Maria Messing for recording some of the TEM images. We acknowledge financial support for the nanowire implantation experiments by the DFG under grants Ro1198/7-3 and FOR1616.
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Borschel, C., Ronning, C. (2016). Low Energy Ion Beam Modification of Nanostructures. In: Wesch, W., Wendler, E. (eds) Ion Beam Modification of Solids. Springer Series in Surface Sciences, vol 61. Springer, Cham. https://doi.org/10.1007/978-3-319-33561-2_12
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