Abstract
Silicon nanowires (SiNWs) are quasi-one-dimensional structures in which electrons are spatially confined in two directions and they are free to move in the orthogonal direction. The subband decomposition and the electrostatic force field are obtained by solving the Schrödinger—Poisson coupled system. The electron transport along the free direction can be tackled using a hydrodynamic model, formulated by taking the moments of the multisubband Boltzmann equation. We shall introduce an extended hydrodynamic model where closure relations for the fluxes and production terms have been obtained by means of the Maximum Entropy Principle of Extended Thermodynamics, and in which the main scattering mechanisms such as those with phonons and surface roughness have been considered. By using this model, the low field mobility for a Gate-All-Around (GAA) SiNW transistor has been evaluated.
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Acknowledgements
We acknowledge the support of the Università degli Studi di Catania, FIR 2014 “Charge Transport in Graphene and Low dimensional Structures: modeling and simulation” and the National Group of Mathematical Physics (GNFM-INdAM), “Progetto giovani 2015”.
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Muscato, O., Castiglione, T., Coco, A. (2017). Low-Field Electron Mobility in Silicon Nanowires. In: Quintela, P., et al. Progress in Industrial Mathematics at ECMI 2016. ECMI 2016. Mathematics in Industry(), vol 26. Springer, Cham. https://doi.org/10.1007/978-3-319-63082-3_44
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