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MgZnO Based UV Heterojunction Photodetector Fabricated Using Dual Ion Beam Sputtering

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The Physics of Semiconductor Devices (IWPSD 2017)

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Abstract

This abstract reports the realization of p-type conduction in Sb (5 at.%): Mg0.10Zn0.90O (SMZO) grown in different growth ambient and then fabrication of SMZO/n-Si based UV heterojunction photodetector grown by dual ion beam sputtering (DIBS) system. The fabricated photodetectors were then probed for the effect of growth ambient using current–voltage (I–V) and photoresponse measurement on photodetector properties.

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Acknowledgements

Authors are thankful to DIBS and PL facility, which are part of Sophisticated Instrument Centre (SIC) of IIT Indore. Ritesh Bhardwaj and Md. Arif Khan would like to thank DeitY, Ministry of Electronics and Information Technology, Government of India, for providing fellowship grant under Visvesvaraya PhD Scheme for Electronics and Information Technology. Prof Shaibal Mukherjee is thankful to DeitY, Ministry of Electronics and Information Technology, Government of India for the Young Faculty Research Fellowship (YFRF) under the Visvesvaraya PhD Scheme for Electronics and Information Technology. This work is also partially funded by DST, Government of India.

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Authors and Affiliations

  1. Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology Indore, Simrol, Indore, 453552, India

    Ritesh Bhardwaj, Pankaj Sharma, Md Arif Khan, Rohit Singh & Shaibal Mukherjee

Authors
  1. Ritesh Bhardwaj
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  2. Pankaj Sharma
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  3. Md Arif Khan
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  4. Rohit Singh
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  5. Shaibal Mukherjee
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Corresponding author

Correspondence to Shaibal Mukherjee .

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Editors and Affiliations

  1. Solid State Physics Laboratory, Delhi, India

    R. K. Sharma

  2. Solid State Physics Laboratory, Delhi, India

    D.S. Rawal

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Bhardwaj, R., Sharma, P., Khan, M.A., Singh, R., Mukherjee, S. (2019). MgZnO Based UV Heterojunction Photodetector Fabricated Using Dual Ion Beam Sputtering. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_149

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