Abstract
In this paper, we report the study of electronic surface of AlGaN/GaN High Electron Mobility Transistor (HEMT) for process improvement of power devices fabrication. HCl based pre-metal treatment was used to remove native oxides from the HEMT surface and an optimum pre-metal treatment timing was achieved which was confirmed from X-ray Photoelectron spectroscopy study.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
A.K. Agarwal, S. Mani, S. Seshadri, J.B. Cassady, P.A. Sanger, C.D. Brandt, N. Saks, Naval Res. Rev. 51(1), 14–21 (1999)
K. Shenai, R.S. Scott, B.J. Baliga, IEEE Trans. Electron Devices 36, 1811 (1989)
N. Onojima, N. Hirose, T. Mimura, T. Matsui, Jpn. J. Appl. Phys. 48, 094502 (2009)
A. Chini, R. Coffie, G. Meneghesso, E. Zanoni, D. Buttari, S. Heikman, S. Keller, U.K. Mishra, Electron. Lett. 39, 625 (2003)
H. Okumura, Jpn. J. Appl. Phys. 45, 7565 (2006)
B. Jacobs, M.C.J.C.M. Kramer, E.J. Geluk, F. Karouta, J. Crystal growth 241, 15 (2002)
B.R. Strohmeir, Surf. Sci. Spectra 3, 135 (1994)
A. Hess, E. Kemnitz, A. Lippitz, W.E.S. Unger, D.H. Menz, J. Catal. 148, 270 (1994)
Y.C. Kim, H.H. Park, J.S. Chun, W.J. Lee, Thin Solid Films 237, 57 (1994)
Y. Okamoto, T. Adachi, A. Maezawa, T. Imanaka, Bull. Chem. Soc. Japan 64, 236 (1991)
K. Saraswat, Stanford University, EE311
Acknowledgements
The authors are thankful to Director, SSPL Dr. R. K. Sharma for his support, encouragement and insightful discussion for this study.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2019 Springer Nature Switzerland AG
About this paper
Cite this paper
Chaubey, R.K. et al. (2019). Surface Study of AlGaN/GaN High Electron Mobility Transistor for Fabrication Process Improvement. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_42
Download citation
DOI: https://doi.org/10.1007/978-3-319-97604-4_42
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-97603-7
Online ISBN: 978-3-319-97604-4
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)