Abstract
Hf-based systems are going into production this year as the high-k materials replacing amorphous SiO2 and Si(O,N) as the gate dielectric in Si MOSFETs. At the same time, metal inserted poly-Si gate electrodes are being used in the gate stacks to remove problems associated with poly-Si gate electrodes. Significant interface interactions can occur in such systems as a result of the thermal budget received during device processing.
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References
A.J. Craven, J. Wilson and W.A.P. Nicholson, Ultramicroscopy 92 (2002), p. 165.
J. Scott, P.J. Thomas, M. MacKenzie, S. McFadzean, J. Wilbrink, A.J. Craven and W.A.P. Nicholson, submitted to Ultramicroscopy (2008).
M. MacKenzie, A.J. Craven, D.W. McComb, C.M. McGilvery, S. McFadzean and S. De Gendt, submitted to proceedings of MSMXV 2007, Cambridge.
We kindly acknowledge the EPSRC for funding (GR/S44280) and B. Miller (University of Glasgow) for TEM specimen preparation.
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MacKenzie, M., Craven, A.J., McComb, D.W., McGilvery, C.M., McFadzean, S., De Gendt, S. (2008). EELS analyses of metal-inserted high-k dielectric stacks. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_12
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DOI: https://doi.org/10.1007/978-3-540-85226-1_12
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