Abstract
Disordered narrow-gap semiconductors have recently been investigated in the context of a search for new thermoelectric materials. Sn3P4 is a narrow-gap semiconductor exhibiting a relatively high thermal conductivity of about 8 W m−1 K−1. Upon cooling to 150 K it undergoes a remarkable transition from n-type conduction to p-type conduction.
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© 2008 Springer-Verlag Berlin Heidelberg
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Lebedev, O.I., Olenev, A.V., Van Tendeloo, G. (2008). Solving the crystal structure of highly disordered Sn3P4 by HRTEM. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_32
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DOI: https://doi.org/10.1007/978-3-540-85226-1_32
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-85225-4
Online ISBN: 978-3-540-85226-1
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