Abstract
The recent development of advanced growth techniques such as molecular beam epitaxy and metal-organic vapor phase epitaxy has made it possible to fabricate ultrathin semiconductor layers, quantum structures, with an accuracy down to atomic layer thickness. This means that dimensions smaller than the de Broglie wavelength of the electrons can be achieved. We have accordingly advanced from the classical physics to a situation with structures in the quantum limit. The driving force for the effort behind this development is the potentiality to modify the electronic properties of the quantum structures by the confinement [1–3].
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© 2004 Springer-Verlag Berlin Heidelberg
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Holtz, P.O., Zhao, Q.X. (2004). Introduction. In: Impurities Confined in Quantum Structures. Springer Series in Materials Science, vol 77. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18657-8_1
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DOI: https://doi.org/10.1007/978-3-642-18657-8_1
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-62228-1
Online ISBN: 978-3-642-18657-8
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