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Frequency Changes in the Second Derivative of Currant — Voltage Characteristics of SnO2-Si the Heterostructures During Gas Adsorption for Different Thickness of the Adsorptive Layers

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MicroNano Integration

Part of the book series: VDI-Buch ((VDI-BUCH))

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Abstract

Heterostructures based on the nanometer-scaled semiconductor oxides can be used as gas-sensitive receptor and transducer systems. In comparison to resistive oxide sensors, having a linear current - voltage characteristics, the sensors based on the heterostructures show non-linear current - voltage characteristics. These structures, based on the industrially developed silicon technology, promise the new remarkable capabilities for the creation of the gas- and biosensitive sensors.

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Authors and Affiliations

  1. Radiophysical Department, Kiev National University, 64, Volodmyrska str., Kiev, 01033, Ukraine

    V. V. Il’chenko, A. I. Kravchenko, V. M. Telega & V. P. Chehun

  2. Institute of Surface Chemistry NAS of Ukraine, Kiev, Ukraine

    L. G. Il’chenko

  3. Chemical Department, Moscow University, Moscow, Russia

    A. M. Gaskov

  4. Institute of Hydromechanics NAS of Ukraine, Kiev, Ukraine

    V. T. Grinchenko

Authors
  1. V. V. Il’chenko
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  2. A. I. Kravchenko
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  3. V. M. Telega
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  4. V. P. Chehun
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  5. L. G. Il’chenko
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  6. A. M. Gaskov
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  7. V. T. Grinchenko
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Editor information

Editors and Affiliations

  1. VDI/VDE-Technologiezentrum, Informationstechnik GmbH, Rheinstraße 10 B, Teltow, 14513, Germany

    Harald Knobloch  & Yvette Kaminorz  & 

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© 2004 Springer-Verlag Berlin Heidelberg

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Il’chenko, V.V. et al. (2004). Frequency Changes in the Second Derivative of Currant — Voltage Characteristics of SnO2-Si the Heterostructures During Gas Adsorption for Different Thickness of the Adsorptive Layers. In: Knobloch, H., Kaminorz, Y. (eds) MicroNano Integration. VDI-Buch. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18727-8_12

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  • DOI: https://doi.org/10.1007/978-3-642-18727-8_12

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-62265-6

  • Online ISBN: 978-3-642-18727-8

  • eBook Packages: Springer Book Archive

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