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III/V Nanowires for Electronic and Optoelectronic Applications

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Nanoparticles from the Gasphase

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Abstract

III/V semiconductor nanowires are grown by the vapour–liquid solid growth mode from Au seed particles in an industrial type metal–organic vapour phase epitaxial apparatus. For electronic applications InAs nanowires with very high electron were developed on InAs (111), InAs (100), and GaAs (111) substrates. The wires were deposited on insulating host substrate for metal–insulator–semiconductor FET fabrication. Their excellent DC and RF performance are presented. For optoelectronic applications the focus is on selective n- and p-type doping. GaAs nanowires with an axial p–n junction are presented. Pronounced electroluminescence at room temperature reveals the quality of the fabricated device. Moreover, spatially resolved photocurrent microscopy shows that optical generation of carriers took place only in the vicinity of the p–n junction. A solar conversion efficiency of 9 % was obtained. In summary, III/V semiconductor nanowires are emerged to high performance and versatile nanoscaled building blocks for both electronic and optoelectronic applications.

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Acknowledgments

The authors are especially indebted to Einar Kruis and Thomas Weber for the aerosol preparation of nanoparticles, to Daniela Sudfeld, Zi-An Li, and Marina Spasova for excellent TEM analysis, to Matthias Offer, Stephan Lüttjohan, and Axel Lorke for high-resolution photoluminescence and photocurrent analysis, and to Benjamin Münstermann for high frequency measurements.

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Authors and Affiliations

  1. Faculty of Engineering, Solid-State Electronics Department, University of Duisburg-Essen, Lotharstraße 55, 47057, Duisburg, Germany

    Christoph Gutsche, Ingo Regolin, Andrey Lysov, Kai Blekker, Quoc-Thai Do, Werner Prost & Franz-Josef Tegude

  2. Wacker Siltronic, Burghausen, Germany

    Quoc-Thai Do

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  1. Christoph Gutsche
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  2. Ingo Regolin
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  3. Andrey Lysov
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  4. Kai Blekker
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  5. Quoc-Thai Do
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  6. Werner Prost
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  7. Franz-Josef Tegude
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Correspondence to Werner Prost .

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Editors and Affiliations

  1. , Department of Physics and CeNIDE, University of Duisburg-Essen, Lotharstr. 1, Duisburg, 47048, Germany

    Axel Lorke

  2. , Nanoparticle Process Technology, University of Duisburg-Essen, Lotharstr. 1, Duisburg, 47048, Germany

    Markus Winterer

  3. Institute for Nano Structures, and Technology (NST), University of Duisburg-Essen, Lotharstr. 1, Duisburg, 47048, Germany

    Roland Schmechel

  4. IVG, Institute for Combustion, and Gasdynamics, University of Duisburg-Essen, Lotharstr. 1, Duisburg, 47048, Germany

    Christof Schulz

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Gutsche, C. et al. (2012). III/V Nanowires for Electronic and Optoelectronic Applications. In: Lorke, A., Winterer, M., Schmechel, R., Schulz, C. (eds) Nanoparticles from the Gasphase. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28546-2_14

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