Abstract
In Chap. 2, all of the existing literature regarding these TM-containing deep PL centres in Si has been reviewed; Chap. 4 provides all of the details made available by high-resolution spectroscopy in highly enriched \(^{28}\mathrm{{Si}}\), for both the well known and the newly discovered centres. These details include the atomic composition of the binding centre as revealed by the isotopic fingerprint, and the energies and isotope shifts of the NP transitions, including splittings of the IBE ground state, which results in different electronic transitions. The recorded relative intensities of these transitions indicate whether transitions are (at least partially) forbidden or allowed. Also provided are the energies, FWHM, and, where available, the isotope shifts of low energy pLVM and high energy LVM replicas of the NP transitions.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
K. Shirai, H. Yamaguchi, A. Yanase, H. Katayama-Yoshida, A new structure of Cu complex in Si and its photoluminescence. J. Phys. Cond. Mat. 21, 064249 (2009)
K. Shirai, H. Yamaguchi, J. Ishisada, K. Matsukawa, A. Yanase, S. Emura, Cu complex in silicon and its photoluminescence, in AIP Conference Proceedings, vol. 1199, ed. by M. Caldas, N. Studart (American Institute of Physics, Melville, 2010), pp. 91–92
S.K. Estreicher, A. Carvalho, The \({\rm {Cu}}_{\rm {PL}}\) defect and the \({\rm {Cu}}_{\rm {s1}}{\rm {Cu}}_{\rm {i3}}\) complex. Phys. B: Cond. Mat. 407(15), 2967–2969 (2012)
A. Carvalho, D.J. Backlund, S.K. Estreicher, Four-copper complexes in Si and the \({\rm {Cu}}_{\rm {PL}}\) defect: a first-principles study. Phys. Rev. B 84, 155322 (2011)
A.A. Istratov, H. Hieslmair, T. Heiser, C. Flink, E.R. Weber, The dissociation energy and the charge state of a copper-pair center in silicon. Appl. Phys. Lett. 72,474–476 (1998)
R.N. Hall, J.H. Racette, Diffusion and solubility of copper in extrinsic and intrinsic germanium, silicon, and gallium arsenide. J. Appl. Phys. 35, 379–397 (1964)
H.H. Woodbury, W.W. Tyler, Triple acceptors in germanium. Phys. Rev. 105, 84–92 (1957)
M.K. Nissen, A.G. Steele, M.L.W. Thewalt, Photoluminescence from excitons bound to a triple acceptor, Ge:Cu. Phys. Rev. B 41, 7926–7928 (1990)
S. Knack, J. Weber, H. Lemke, H. Riemann, Evolution of copper-hydrogen-related defects in silicon. Phys. B 308–310, 404–407 (2001)
N. Yarykin, J. Weber, Copper-related deep-level centers in irradiated \(p\)-type silicon. Phys. Rev. B 83, 125207 (2011)
S. Knack, Copper-related defects in silicon. Mat. Sci. Semicond. Process. 7, 125–141 (2004)
A.A. Istratov, H. Hieslmair, C. Flink, T. Heiser, E.R. Weber, Interstitial copper-related center in n-type silicon. Appl. Phys. Lett. 71, 2349–2351 (1997)
G. Davies, L. Canham, E. Lightowlers, Magnetic and uniaxial stress perturbations of optical transitions at a four Li atom complex in Si. J. Phys. C 17, L173–L178 (1984)
M. Nakamura, S. Murakami, N.J. Kawai, S. Saito, K. Matsukawa, H. Arie, Compositional Transformation between Cu centers by annealing in Cu-diffused silicon crystals studied with deep-level transient spectroscopy and photoluminescence. Jpn. J. Appl. Phys. 48, 082302 (2009)
M. Nakamura, S. Murakami, Deep-level transient spectroscopy and photoluminescence studies of formation and depth profiles of copper centers in silicon crystals diffused with dilute copper. Jpn. J. Appl. Phys. 49, 071302 (2010)
M. Nakamura, S. Murakami, Depth progression of dissociation reaction of the 1.014-eV photoluminescence copper center in copper-diffused silicon crystal measured by deep-level transient spectroscopy. Appl. Phys. Lett. 98, 141909 (2011)
M. Steger, A. Yang, T. Sekiguchi, K. Saeedi, M.L.W. Thewalt, M.O. Henry, K. Johnston, H. Riemann, N.V. Abrosimov, M.F. Churbanov, A.V. Gusev, A.K. Kaliteevskii, O.N. Godisov, P. Becker, H.-J. Pohl, Photoluminescence of deep defects involving transition metals in Si—new insights from highly enriched \(^{28}{\rm {Si}}\). Appl. Phys. Rev. 110, 081301 (2011)
A. Yang, M. Steger, M.L.W. Thewalt, T.D. Ladd, K.M. Itoh, E.E. Haller, J.W. Ager III, H. Riemann, N.V. Abrosimov, P. Becker, H.-J. Pohl, Nuclear polarization of phosphorus donors in \(^{28}{\rm {Si}}\) by selective optical pumping, in AIP Conference Proceeding, vol. 1199, ed. by M. Caldas, N. Studart (American Institute of Physics, Melville, 2010), pp. 375–376
M. Steger, T. Sekiguchi, A. Yang, K. Saeedi, M.E. Hayden, M.L.W. Thewalt, K.M. Itoh, H. Riemann, N.V. Abrosimov, P. Becker, H.-J. Pohl, Optically detected NMR of optically hyperpolarized \(^{31}{\rm P}\) neutral donors in \({}^{28}{\rm {Si}}\). J. Appl. Phys. 109, 102411 (2011)
S. Simmons, R.M. Brown, H. Riemann, N.V. Abrosimov, P. Becker, H.-J. Pohl, M.L.W. Thewalt, K.M. Itoh, J.J.L. Morton, Entanglement in a solid-state spin ensemble. Nature 470, 69–72 (2011)
M. Steger, K. Saeedi, M.L.W. Thewalt, J.J.L. Morton, H. Riemann, N.V. Abrosimov, P. Becker, H.-J. Pohl, Quantum information storage for over 180 s using donor spins in a \(^{28}{\rm {Si}}\) “semiconductor vacuum”. Science 336, 1280–1283 (2012)
R.A. Modavis, D.G. Hall, Aluminum-nitrogen isoelectronic trap in silicon. J. Appl. Phys. 67, 545–547 (1990)
J. Weber, W. Schmid, R. Sauer, Excitons bound to an isoelectronic trap in silicon. J. Lumin. 18–19, 93–96 (1979)
R. Sauer, J. Weber, W. Zulehner, Nitrogen in silicon: towards the identification of the 1.1223-eV (A, B, C) photoluminescence lines. Appl. Phys. Lett. 44, 440–442 (1984)
M.O. Henry, K.G. McGuigan, R.C. Barklie, Bound exciton recombination at Mn-Zn pair centres in silicon. Solid State Commun. 64, 31–33 (1987)
M.O. Henry, D.J. Beckett, A.G. Steele, M.L.W. Thewalt, K.G. McGuigan, A zinc-related isoelectronic bound exciton in silicon. Solid State Commun. 66, 689–694 (1988)
V. Thomas, J. Barrau, M. Brousseau, K. Kirouni, G. Couloumiers, The luminescence of palladium-doped silicon. Phys. Stat. Sol. B 148, 723–727 (1988)
E. McGlynn, M.O. Henry, K.G. McGuigan, M.C. doCarmo, Photoluminescence study of cadmium-related defects in oxygen-rich silicon. Phys. Rev. B 54, 14494–14503 (1996)
G.S. Mitchard, S.A. Lyon, K.R. Elliott, T.C. McGill, Observation of long lifetime lines in photoluminescence from Si:In. Solid State Commun. 29, 425–429 (1979)
M.L.W. Thewalt, U.O. Ziemelis, P.R. Parsons, Enhancement of long lifetime lines in photoluminescence from Si:In. Solid State Commun. 39, 27–30 (1981)
T.E. Schlesinger, T.C. McGill, Role of Fe in new luminescence lines in Si:Tl and Si:In. Phys. Rev. B 25, 7850–7851 (1982)
T. Schlesinger, R. Hauenstein, R. Feenstra, T. McGill, Isotope shifts for the P, Q, R lines in indium-doped silicon. Solid State Commun. 46, 321–324 (1983)
S. Watkins, M. Thewalt, T. Steiner, Isoelectronic bound excitons in In- and Tl-doped Si: a novel semiconductor defect. Phys. Rev. B 29, 5727–5738 (1984)
A. Henry, B. Monemar, J.P. Bergman, J.L. Lindström, P.O. Holtz, Y. Zhang, J.W. Corbett, Mercury-related luminescent center in silicon. Phys. Rev. B 47, 13309–13313 (1993)
M.O. Henry, E. McGlynn, J. Fryar, S. Lindner, J. Bollmann, The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes. Nucl. Instr. Meth. Phys. Res. B 178, 256–259 (2001)
M.L.W. Thewalt, U.O. Ziemelis, R.R. Parsons, Isoelectronic bound excitons in silicon: the role of deep acceptors. Phys. Rev. B 24, 3655–3658 (1981)
H. Conzelmann, A. Hangleiter, J. Weber, Thallium-related isoelectronic bound excitons in silicon. A bistable defect at low temperatures. Phys. Stat. Sol. B 133, 655–668 (1986)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2013 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Steger, M. (2013). Discussion and Conclusion. In: Transition-Metal Defects in Silicon. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-35079-5_5
Download citation
DOI: https://doi.org/10.1007/978-3-642-35079-5_5
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-35078-8
Online ISBN: 978-3-642-35079-5
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)