Abstract
The growth of crystals through transport, diffusion and attachment of each particle, as well as dissipation of heat is discussed. Nucleation and growth habit, are discussed Typical growth techniques from vapor, melt, and chemical reactions are exemplified. Recrystallization, including means of purification are given, stress and flux enhanced crystallization and local heating is discussed.
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Notes
- 1.
Even after melting, many nuclei are not broken down and can act as growth centers when the temperature is lowered below the melting point T m .
- 2.
When grown from an evaporation source, spiral growth is preferred with a substrate perpendicular to the source (e.g. CdS). This requires that the source remains stationary to produce large crystallites, and makes continuous growth on a band disadvantageous as it tends to produce small crystallites in various orientations.
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B. Pamplin, Crystal Growth, 2nd edn. (Pergamon, New York, 1980)
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Böer, K.W. (2013). The Growth of Semiconductors. In: Handbook of the Physics of Thin-Film Solar Cells. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36748-9_3
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DOI: https://doi.org/10.1007/978-3-642-36748-9_3
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