Abstract
Picosecond time-domain measurements of silicon-integrated circuit interconnects were successfully performed using both bulk silicon photoconductors and polycrystalline (poly-Si) silicon photoconductors integrated on-chip. Standard integrated circuit fabrication techniques, followed by shadow-masked, ion-beam irradiation were used to create the photoconductor/interconnect structures on silicon wafers of 6-ohm-cm to 70-ohm-cm resistivities. A subpicosecond pulsed laser system excited the photoconductors to produce and sample electrical pulses on the Si substrate.
D. R. Bowman acknowledges partial support from the Fannie and John Hertz Foundation. R. B. Hammond acknowledges support from the United States Department of Energy.
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REFERENCES
W. R. Eisenstadt, R. B. Hammond, and R. W. Dutton, “Integrated Silicon Photoconductors for Picosecond Pulsing and Gating,” IEEE Elec. Dev. Letts. EDL-5, 296-259 (Aug. 1984).
R. B. Hammond, N. G. Paulter, R. S. Wagner, and W. R. Eisenstadt, “Integrated Picosecond Photoconductors Produced on Bulk Silicon Substrates,” Appl. Phys. Letts. 45, 404–405 (1984).
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© 1985 Springer-Verlag Berlin Heidelberg
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Eisenstadt, W.R., Hammond, R.B., Bowman, D.R., Dutton, R.W. (1985). Time-Domain Measurements for Silicon Integrated Circuit Testing Using Photoconductors. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_12
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DOI: https://doi.org/10.1007/978-3-642-70780-3_12
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