Abstract
MeV ion backscattering and nuclear microanalysis are very sensitive tools which, coupled to Auger electron spectroscopy, provide quantitative information on elemental composition of solid surfaces. The channeling phenomenon enables the measurement of a few hundred’s of  displacements of atoms from lattice sites and the analysis of surface crystallographic structures, epitaxial layers and interface defects. The principles of such experiments are presented and examples are given which illustrate the possibilities of nuclear techniques in various domains related to surface physics.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
W.K. Chu, J.W. Mayer and M.A. Nicolet: Backscattering Spectrometry, Acad. Press, New York, San Francisco, London, 1978
L.C. Feldman, J.W. Mayer and S.T. Picraux: Material Analysis by Ion Channeling, Acad. Press, New York, London, Paris, San Francisco, Sao Paulo, Sldney, Tokyo, Toronto, 1982
J.F. Van der Veen: Surface Sci. Reports, 5, 199 (1985)
G. Amsel, J.P. Nadai, E. d’Artemare, D. David, E. Girard and J. Moulin Nucl. Instrum. and Meth. 92,481 (1971)
S. Rigo, Silicon Films onSilicon, in “Instabilities in Silicon Devices” G. Barbottin and A. Vapaille editors, Elsevier SClence Publishers B.V. North Holland, p. 5, 1986
P. Rabinzohn, G. Gautherin, B. Agius and C. Cohen: J. Electrochem. Soc., 131,905 (1984)
I. Stensgaard: Nucl. Instrum. and Meth., B15, 300, (1986).
I. Stensgaard, L.C. Feldman and P.J. Silverman: Surf. Sci., 77, 513 (1978)
J.C. Boulliard, C. Cohen, J.L. Domange, A.V. Drigo, A. L’Hoir, J. Moulin and M. Sotto: Phys. Rev. B, 30, 2470 (1984)
R.G. Smeenk, R.M. Tromp, H.H. Kersten,A.J.H. Boerboom and F.W. Saris: Nucl. Instrum. and Meth. 195, 581, (1982)
D.P. Jackson, T.E. Jackman:-J.A. Davies, W.N. Unertl and P.R. Norton: Surf. Sci., 126,226 (1983)
P.R. Norton, A. Davies, D.P. Jackson and N. Matsunami: Surf. Sci., 85, 269 (1979)
J.W.M. Frenken and J.F. Van der Veen: Phys. Rev. Lett., 54, 134 (1985)
R. T. Tung, J.C. Bean, J.M. Poate, J.M. Gi bson and D.C. JaCObsof.: Appl. Phys. Lett. 40,684 (1982)
W.K. Chu, F.W. Saris, C.A. Chang, R. Luedke and L. Esaki: Phys. Rev. B, 26, 1999 (1982)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1987 Springer-verlag Berlin Heidelberg
About this paper
Cite this paper
Cohen, C. (1987). Surface and Interface Studies with MeV Ion Beams. In: Le Lay, G., Derrien, J., Boccara, N. (eds) Semiconductor Interfaces. Springer Proceedings in Physics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72967-6_13
Download citation
DOI: https://doi.org/10.1007/978-3-642-72967-6_13
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-72969-0
Online ISBN: 978-3-642-72967-6
eBook Packages: Springer Book Archive