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Application of Computer-Controlled SIMS to Depth Profiling of Impurities Implanted in Silicon with High Dose of B+or BF2 + Ions

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Secondary Ion Mass Spectrometry SIMS IV

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 36))

Abstract

Recently, TANIGAKI and co-workers have developed an electronic data processing system for an ion microprobe mass analyzer (ARL-IMMA) interfaced with a personal computer, that is to say an “automatic depth profiler” [1]. In this system, conversion of secondary ion intensity to atomic concentration and of sputtering time to depth scale can be easily carried out by setting two main parameters, viz. the measured conversion coefficient and the sputtering rate.

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References

  1. T. Tanigaki and T. Harada : Japan Society for the Promotion of Science, 141st Committee-Microbeam Analysis, The 10th Local Meeting, July (1982) 45.

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  2. K. Nishiyama, M. Arai and N. Watanabe : Jpn. J. Appl. Phys. 19, L563 (1980).

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  3. H. Ryssel, K. Müller, K. Haberger, R. Henkelmann and F. Jahnel : Appl. Phys. 22, 35 (1980).

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  4. W. K. Hofker, H. W. Werner, D. P. Oosthoek and H. A. M. de Grefte : Appl. Phys. .2, 265 (1973).

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© 1984 Springer-Verlag Berlin Heidelberg

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Tanigaki, T., Kawado, S., Nishiyama, K. (1984). Application of Computer-Controlled SIMS to Depth Profiling of Impurities Implanted in Silicon with High Dose of B+or BF2 + Ions. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_81

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  • DOI: https://doi.org/10.1007/978-3-642-82256-8_81

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82258-2

  • Online ISBN: 978-3-642-82256-8

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