Abstract
The present, study reports research results of a dislocation structure of epitaxial layers SiC-3C/Si, grown by CVD without a buffer layer and by “buffer” technology. X-ray differential diffractometry and TEM were used to establish the structure of the grown SiC-3C layers. It was revealed that single crystalline epitaxial films can be produced on Si(111) substrate without buffer layer at 1100°C. These films have a mosaic structure with coherent scattering block size of 300–600A near the substrate. By increasing the layer thickness, the size of blocks becomes larger with transformation of defect structure into randomly distributed dislocation ensemble.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Y. Kondo, S. Misawa, H. Daimon, M. Yamanada and S. Yoshida, IEEE Electron Device Lettera, EDL-7(1986) 404–406.
G. Kelner, S. Binari, K. Sieger, H. Kong, IEEE Electron Device Letters. EDL-8(1987) 428–430.
T. Sugli and T. Ito, Y. Furumura, D. Doki, F. Mieno and M. Maeda, J. of Electrochem. Soc.. 134 (1987) 2545–2549.
S. Nishino, J. A. Powell and H. A. Will, Appl. Phys. Lett.. 42. (1983) 460–462.
A. Addamiano, J. A. Sprague, Appl. Phvs. Lett.. 44 (1984). 525–527.
S. Nishino, H. Suhara, H. Ono, H. Matsumuri, 61 (1987), 4889–4893.
P. Pirouz, C. M. Chorey, T. T.Cheng and J. A. Powell. of Semiconducting Materials. 1987 (IoP Conf. Ser. 87 ), 175–180.
S. R. Nutt, D. Smith, H. Kim, H. Davis, Appl. Phys. Lett. 50 (1987) 203–205.
M. A. Krivoglaz, “X-ray and neutron diffraction in nonideale crystals”. Kiev, “Naukova Dumka”, p. 407, 1983 [in Russian].
I. M. Baranov, N. A. Belov, V. A. Dmitriev, N. G. Ivanova, T. S. Kondratieva, I. P. Nikitina, V. E. Chelnokov, V. F. Shatalov, R. N. Erlih, Pisma w ZhTF. 15. N 12 (1989) 50–52 [in Russian].
S. S..Gorelic, L. N. Rastorguev and U. A. Skakov, “X-ray diffraction and electron diffraction analysis”, Moskow, “Metallurgia”, p. 367, 1970 [in Russian].
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Kyutt, R.N., Nikitina, I.P., Ruvimov, S.S., Baither, D. (1992). Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_29
Download citation
DOI: https://doi.org/10.1007/978-3-642-84804-9_29
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84806-3
Online ISBN: 978-3-642-84804-9
eBook Packages: Springer Book Archive